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PNP SILICON TRANSISTOR |
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NPN Silicon Bipolar Transistor |
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Silicon N-Channel IGBT High Speed Power Switching |
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NPN Silicon Transistor Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, |
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Silicon NPN Power Transistor ee Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4977 MAX UNIT VCEO( |
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Silicon NPN Power Transistors =25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; I |
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(2SJ118 / 2SJ119) SILICON P-CHANNEL MOS FET |
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NPN Silicon Transistor |
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Texas Instruments |
Silicon NPN Transistor |
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ETC |
Silicon NPN Transistor |
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ETC |
Silicon phototransistor |
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LINEARNI INTFGROVANE OBVODY OPERACNI ZESILOVAC |
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ETC |
Silicon Planar PNP Transistor |
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ETC |
Silicon NPN Transistor |
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Texas Instruments |
Silicon NPN Transistor |
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Texas Instruments |
Silicon NPN Transistor |
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ETC |
PARALLEL INPUT TONE/PULSE DIALER HIGH-PERFORMANCE SILICON-GATE CMOS #, and A • High group tone pre-emphasis: 2 dB • Low total harmonic distortion in DTMF PIN ASSIGNMENT signaling VCC 0.1mk 01 MODE 03 M/B 04 T/P 05 06 D1 07 D2 08 D3 13 CE 02 LATCH 16 VCC DP 14 ACK 15 TONE 09 2.5 - 10k TTL - compatible D0 2.2k 12 |
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Silicon NPN Transistor |
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PLASTIC SILICON RECTIFIERS Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Free, Alcohol, Isopropanol and sim ilar solvents MECHANICAL DATA Case: JEDEC DO-27,m olded plastic Term inals: Axial lead ,solderable per MIL- |
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SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS d notes apply CASE 20.03 TO ·72 2N5556 thru 2N5558 (continued) ELECTRICAL CHARACTERISTICS (TA = 25'C unle55 otherwISe noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -10 !lAdc, VDS = 0) Gate -Source Cutoff Voltage (VDS |
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Desde 2024. D4U Semiconductor.
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