No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
FlashFlex51 MCU • 8-bit 8051-Compatible Microcontroller (MCU) with Embedded SuperFlash Memory – Fully Software Compatible – Development Toolset Compatible – Pin-For-Pin Package Compatible • SST89C54/58 Operation – 0 to 33MHz at 5V • 256 Bytes Internal RAM • Dual Bl |
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ETC |
DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET • Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) S21 Gmax • +28 dBm P1dB Typical • +40 dBm Output IP3 Typical • High Drain Efficiency: Up to 46% at Class AB • 17 dB |
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ETC |
0.05-3 GHz/ 2 Watt GaAs HFET • High Linearity Performance at 1.96 GHz Gmax S 21 Gai n OIP3 P 1dB PCHAN NF IDSS gm VP Maxi mum Avai lable Gai n Inserti on Gai n Power Gai n [1] M M E [2] Output Thi rd Order Intercept Poi nt Output 1dB C ompressi on Poi nt [2] IS-95 C hannel |
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ETC |
DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET • Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB |
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ETC |
1.0 Watt GaAs HFET • Patented GaAs Heterostructure FET Technology • +30dBm Output Power at 1dB Compression • +46dBm Output IP3 • High Drain Efficiency: Up to 40% at Class AB • 13 dB Gain at 900MHz (Application circuit) • 13 dB Gain at 1900MHz (Application circuit) App |
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