| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
2SD5702 mitter cut-off current DC current gain DC current gain Transition frequency Diode forward voltage Fall time CONDITIONS IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=10V IF=6A IC=4A ;IB1=0.8A;IB2=- |
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ETC |
Silicon Transistor For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed: 260°C / 10 seconds at te |
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ETC |
Triple Diffused Mesa Type Silicon Transistor |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
Silicon Transistor For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed: 260°C / 10 seconds at te |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(OSDxx-E) Silicon Photodetectors |
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ETC |
SURFACE MOUNT DEVICES PT TVS3.6VAESPT TVS4.2VAESPT - 4.8 - 5.2 5.4 - 5.8 6 - 6.5 1 1 1 ★ Add the "GP" after part number to stand for Halogens-free 3.3 0.05 11.2 14.1 SC-79 3 1 10 15 SOT-23 3.6 1 10 17 SOT-23 4.2 1 10 19 SOT-23 1-44 SURFACE MOUNT DEVICES FOR HYBRID |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts |
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ETC |
NPN/PNP SILICON TRANSISTOR |
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ETC |
(OSDxx-E) Silicon Photodetectors |
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ETC |
Silicon NPN Transistor |
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Desde 2024. D4U Semiconductor.
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