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ETC |
Complementary Power Transistors • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount • • • • • • (“T4” Suffix) Electri |
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ETC |
Varistors Ϡ Low leakage current,Excellent voltage ratio. Ϡ Fast respond to the rapidly rising surge voltage. Ϡ High performance in clamping voltage characteristics. Ϡ High performance in surge current withstanding capability. Applications Ϡ Transistor, diod |
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ETC |
CERAMIC SURGE ABSORBERS |
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ETC |
Low-frequency amplification shell rated bipolar transistors 0.7 4 4 V V V S S MHz ×îСֵ 400 700 9 100 50 10 50 ×î´óÖµ . µ¥Î» V V V A A A VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat)(1) IC=2A, VCE(sat)(2) IC=8A, VBE(sat) tf ts fT IC=2A, VCC=24V IC=5A, IB1=-IB2=1A VCC=24V IC=5A, IB1=-IB |
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ETC |
Coated Wire-wound Resistors ● ● ● ●Low noise ●Excellent linearity ●High temperature resistant ◆ Dimensions(mm) Type RX21-0.25W RX21-0.5W RX21-1W RX21-2W(3W) RX21-4W RX21-5W(6W) RX21-8W RX21-10W RX21-12W Lmax 8 10 15 16 26 26 34 40 48 Dimensions(mm) D±1 2.5 3.5 4.5 6.5 9 9.5 |
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Texas Instruments |
Low Voltage Operational Amplifiers •1 Industry standard amplifier for cost-sensitive systems • Low input offset voltage: ±1 mV • Common-mode voltage range includes ground • Unity-gain bandwidth: 1 MHz • Low broadband noise: 40 nV/√Hz • Low quiescent current: 90 µA/Ch • Unity-gain stab |
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ETC |
Hybrid Stepper Motors I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number Resistance Inductance Rated per Phase per Phase Current ohm mH A 17HD2011N 1.9 4 1.5 17HD2015N 18 35 0.5 17HD2018N 6 14 0.85 17HD2022N 16 32.0 |
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ETC |
RSN309W44 K D658 MA165TA C630 C620 R642 0.1 0.1 10 C628 C626 R652 0.1 0.1 10 C632 0.047 C648 1000P D601 SB360L6508 C616 50V0.47 N LF(8 ) B R608 C614 R607 C613 R610 C612 R609 C611 R604 3.3K 56K 47P 56K 47P 150K 15P 150K 15P C553 50V0.47 R551 68K |
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ETC |
Complementary Power Transistors • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount • • • • • • (“T4” Suffix) Electri |
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Texas Instruments |
BCD-TO-SEVEN-SEGMENT DECODERS/DRIVERS , ’LS49 BCD-TO-SEVEN-SEGMENT DECODERS/DRIVERS SDLS111 – MARCH 1974 – REVISED MARCH 1988 •4 POST OFFICE BOX 655303 DALLAS, TEXAS 75265 SN5446A, ’47A, ’48, SN54LS47, ’LS48, ’LS49 SN7446A, ’47A, ’48, SN74LS47, ’LS48, ’LS49 BCD-TO-SEVEN-SEGMENT DECODERS |
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ETC |
Low-frequency amplification shell rated bipolar transistors µçÌØÐÔ Ïî ¼¯µç«¡ª»ù÷´©Ñ¹ ·¢É伫¡ª»ù÷´©µçѹ ¼¯µç«¡ª»ù ·´Ïò©Á÷ ·¢É伫¡ª»ù´Ïò©µçÁ÷ Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ×èÄá¶þ¼«¹ÜÕýÏòѽµ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ (Tc=25¡æ Ä¿ V(BR)CBO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) |
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ETC |
Amplifier Transistors E = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) B |
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ETC |
Silicon NPN Power Transistors =25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; I |
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ETC |
Low-frequency amplification shell rated bipolar transistors µ 1700 5 66 10 5 1.7 ×î´óÖµ 1 200 30 5 1.5 2 0.7 12 ¦Ì ¦Ì V V V S S µ¥Î» V V mA mA V(BR)CBO V(BR)EBO ICBO IEBO Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ×èÄá¶þ¼«¹ÜÕýÏòѽµ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ hFE(1) hFE(2) VCE(sat) VBE(sat) -VF tf ts fT |
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Texas Instruments |
Quad Differential Comparators •1 Wide Supply Ranges – Single Supply: 2 V to 36 V (Tested to 30 V for Non-V Devices and 32 V for V-Suffix Devices) – Dual Supplies: ±1 V to ±18 V (Tested to ±15 V for Non-V Devices and ±16 V for V-Suffix Devices) • Low Supply-Current Drain Independe |
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Texas Instruments |
4-BIT SYNCHRONOUS UP/DOWN COUNTERS allows the counters to be used as modulo-N dividers simply by modifying the count length with the preset inputs. A clear (CLR) input has been provided that forces all outputs to the low level when a high level is applied. The clear function is indepe |
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Texas Instruments |
JFET-Input Operational Amplifiers • High slew rate: 20V/μs (TL08xH, typ) • Low offset voltage: 1mV (TL08xH, typ) • Low offset voltage drift: 2 μV/°C • Low power consumption: 940μA/ch (TL08xH, typ) • Wide common-mode and differential voltage ranges – Common-mode input voltage range in |
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ETC |
Primary side control high accuracy constant voltage / constant current PWM Controllers |
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Texas Instruments |
Low-Power JFET-Input Operational Amplifiers •1 Very Low Power Consumption • Typical Supply Current: 200 μA (Per Amplifier) • Wide Common-Mode and Differential Voltage Ranges • Low Input Bias and Offset Currents • Common-Mode Input Voltage Range Includes VCC+ • Output Short-Circuit Protection • |
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Texas Instruments |
JFET-Input Operational Amplifiers • High slew rate: 20V/μs (TL08xH, typ) • Low offset voltage: 1mV (TL08xH, typ) • Low offset voltage drift: 2 μV/°C • Low power consumption: 940μA/ch (TL08xH, typ) • Wide common-mode and differential voltage ranges – Common-mode input voltage range in |
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Desde 2024. D4U Semiconductor.
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