| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
256K Static RAM 32K x 8-Bit s High-speed access times Com’l: 7, 8, 10, 12, and 15 ns Ind’l: 8, 10, 12, and 15 ns s Low power operation (typical) - PDM41256SA Active: 400 mW Standby: 150 mW - PDM41256LA Active: 350 mW Standby: 25 mW s Single +5V (±10%) power supply s TTL-compati |
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ETC |
IGBT Ｃollector-Ｅmitter Ｃut-Ｏff Ｃurrent ＩＣＥＳ ＶＣＥ= 600V, ＶＧＥ= 0V － － １.０ ｍＡ ゲートれ Ｇate-Ｅmitter Ｌeakage Ｃurrent ＩＧＥＳ ＶＧＥ= ±20V,ＶＣＥ= 0V － － １.０ μＡ コレクタ ・エミッタ Ｃollector-Ｅmitter Ｓaturation Ｖoltage ＶＣＥ（ｓａｔ） ＩＣ= 200A,ＶＧＥ= 15V － ２.１ ２.６ Ｖ ゲ ー ト しきい Ｇat |
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Texas Instruments |
PDM Output with Pre-Amplifier 1 •2 (Typical VDD = 1.8V, CLOCK = 1.2 MHz, fINPUT = 1 kHz, VINPUT = 18 mVPP, unless otherwise specified) • Enhanced high-performance, full PDM output from the element • Stereo chipset and array routing • SNR A-weighted 59 dB • Digital A-weighted nois |
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Texas Instruments |
PDM Output with Pre-Amplifier 1 •2 (Typical VDD = 1.8V, CLOCK = 1.2 MHz, fINPUT = 1 kHz, VINPUT = 18 mVPP, unless otherwise specified) • Enhanced high-performance, full PDM output from the element • Stereo chipset and array routing • SNR A-weighted 59 dB • Digital A-weighted nois |
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Desde 2024. D4U Semiconductor.
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