| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY ce D Power-Down Mode D Compatible With JEDEC Standards D 16K RAS-Only Refresh (Total for All Banks) D 4K Auto Refresh (Total for All Banks)/64 ms D Automatic Precharge and Controlled Precharge D Burst Interruptions Supported: – Read Interruption – Wr |
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ETC |
Battery |
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Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES CAS RAS CS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 VSS 49 DQ15 48 DQ14 47 VSSQ 46 DQ13 45 DQ12 44 VCCQ 43 DQ11 42 DQ10 41 VSSQ 40 DQ9 39 DQ8 38 VCCQ 37 NC 36 DQMU 35 CLK 34 CKE 33 NC 32 A9 31 A8 |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY ce D Power-Down Mode D Compatible With JEDEC Standards D 16K RAS-Only Refresh (Total for All Banks) D 4K Auto Refresh (Total for All Banks)/64 ms D Automatic Precharge and Controlled Precharge D Burst Interruptions Supported: – Read Interruption – Wr |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY ce D Power-Down Mode D Compatible With JEDEC Standards D 16K RAS-Only Refresh (Total for All Banks) D 4K Auto Refresh (Total for All Banks)/64 ms D Automatic Precharge and Controlled Precharge D Burst Interruptions Supported: – Read Interruption – Wr |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY K CYCLE TIME tCK3 tCK2 (CL† = 3) (CL = 2) 8 ns 10 ns 8 ns 15 ns 10 ns 15 ns ACCESS TIME (CLOCK TO OUTPUT) tAC3 tAC2 (CL = 3) (CL = 2) 6 ns 6 ns 7.5 ns 6 ns 7 ns 7.5 ns REFRESH TIME INTERVAL 64 ms 64 ms 64 ms † CL = CAS latency TMS626 |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY K TO OUTPUT) tAC3 tAC2 (CL = 3) (CL = 2) 7 ns 7 ns REFRESH TIME INTERVAL 64 ms † CL = CAS latency description The TMS626812A is a high-speed, 16777 216-bit synchronous dynamic random-access memory (SDRAM) device organized as: D Two banks of 1 |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY 10 11 12 13 14 15 16 17 18 19 20 21 22 44 VSS 43 DQ7 42 VSSQ 41 DQ6 40 VCCQ 39 DQ5 38 VSSQ 37 DQ4 36 VCCQ 35 NC 34 NC 33 DQM 32 CLK 31 CKE 30 NC 29 A9 28 A8 27 A7 26 A6 25 A5 24 A4 23 VSS SYNCHRONOUS CLOCK CYCLE TIME tCK3 tCK2 (CL = 3) (CL = |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY L W CAS RAS CS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 VSS 49 DQ15 48 DQ14 47 VSSQ 46 DQ13 45 DQ12 44 VCCQ 43 DQ11 42 DQ10 41 VSSQ 40 DQ9 39 DQ8 38 VCCQ 37 NC 36 DQMU 35 CLK 34 CKE 33 NC 32 A9 31 |
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Desde 2024. D4U Semiconductor.
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