| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Texas Instruments |
Integrated GaN Fet Power Stage •1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN pac |
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Texas Instruments |
Automotive Low Side GaN and MOSFET Driver •1 AEC-Q100 grade 1 qualified • 1.25-ns typical minimum input pulse width • 2.6-ns typical rising propagation delay • 2.9-ns typical falling propagation delay • 300-ps typical pulse distortion • Independent 7-A pull-up and 5-A pull-down current • 650 |
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Texas Instruments |
GaN FET • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimizati |
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ETCTI |
GaN Technology Preview: LMG5200 80-V GaN Half Bridge Power Stage (Rev. B) |
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Texas Instruments |
Low-Side GaN and MOSFET Driver •1 Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs • 1 ns Minimum Input Pulse Width • Up to 60 MHz Operation • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay • 400 ps Typical Rise and Fall Time • 7-A Peak Source and 5-A Peak Sink Currents |
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Texas Instruments |
GaN FET • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimizati |
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ETC |
LCD Module 2. ELECTRICAL CHARACTERISTICS: LCD TYPE LCM BACKLIGHT TYPE LCM CONTROLLER IC POWER SUPPLY FOR LCM LED BACKLIGHT INPUT STN/FSTN LED/EL BACKLIGHT BUILT IN LC7981 OR EQUIVALENT DC +5.0V DC +5.0V AC90~100V(400~700HZ) SDEC-I002A ITEM SYM CONDITION |
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Texas Instruments |
Integrated GaN Fet Power Stage •1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN pac |
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Texas Instruments |
GaN •1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm Q |
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Texas Instruments |
GaN •1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm Q |
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Texas Instruments |
GaN FET •1 TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN pac |
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Texas Instruments |
GaN FET •1 TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN pac |
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ETC |
DSTN 31 Pin |
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ETC |
DOT MATRIX LIQUID CRYSTAL DISPLAY MODULE ) mm 0.52 (W) X 0.52 (H) mm STN , Gray , 1/64 Duty , 1/9 Bias , 6 O‘clock STN , Yellow Green , 1/64 Duty , 1/9 Bias , 6 O‘clock STN , Gray , 1/64 Duty , 1/9 Bias , 6 O‘clock , EL Backlight ( Color is Blue) STN , Yellow Green , 1/64 Duty , 1/9 Bias , |
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ETC |
Display Module 2. ELECTRICAL CHARACTERISTICS: LCD TYPE LCM BACKLIGHT TYPE LCM CONTROLLER IC POWER SUPPLY FOR LCM STN/FSTN LED/EL BACKLIGHT BUILT IN KS0108 OR EQUIVALENT DC +5.0V DC +5.0V AC90~100V(400~700HZ) SDEC-I002A 93.0x77.0x9.5(14.0) mm 72.0x39.0 mm 0.48x0 |
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Texas Instruments |
Half Bridge GaN Driver • Independent high-side and low-side TTL logic inputs • 1.2-A peak source, 5-A sink current • High-side floating bias voltage rail operates up to 100 VDC • Internal bootstrap supply voltage clamping • Split outputs for adjustable turnon, turnoff stre |
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ETC |
LMG-SSC12A64Dxx ) mm 0.52 (W) X 0.52 (H) mm STN , Gray , 1/64 Duty , 1/9 Bias , 6 O‘clock STN , Yellow Green , 1/64 Duty , 1/9 Bias , 6 O‘clock STN , Gray , 1/64 Duty , 1/9 Bias , 6 O‘clock , EL Backlight ( Color is Blue) STN , Yellow Green , 1/64 Duty , 1/9 Bias , |
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Desde 2024. D4U Semiconductor.
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