| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Texas Instruments |
JFET Input Operational Amplifier •1 Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offs |
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Texas Instruments |
FLASH MEMORIES of Program/Erase Cycle Completion – Hardware Method for Detection of Program/Erase Cycle Completion Through Ready/Busy (RY/BY) Output Pin "D High-Speed Data Access at 3.3-V VCC 10% at Three Temperature Ranges – 90 ns Commercial . . . 0°C to 70°C – 10 |
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Texas Instruments |
Quadruple Half-H Drivers •1 Wide Supply-Voltage Range: 4.5 V to 36 V • Separate Input-Logic Supply • Internal ESD Protection • High-Noise-Immunity Inputs • Output Current 1 A Per Channel (600 mA for L293D) • Peak Output Current 2 A Per Channel (1.2 A for L293D) • Output Clam |
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Texas Instruments |
100-V Half-Bridge Gate Driver •1 Drives Both a High-Side and Low-Side N-Channel MOSFET • 1.8-A Peak Output Sink Current • 1.2-A Peak Output Source Current • Bootstrap Supply Voltage Range up to 118-V DC • Single TTL Compatible Input • Programmable Turnon Delays (Dead-Time) • Enab |
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ETC |
Infrared Receiver |
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ETCTI |
LF444 Quad Low Power JFET Input Operational Amplifier (Rev. D) |
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ETC |
SELF CONTAINED E GSM/GPRS 900/1800 OR 850/1900 BI BAND MODULE |
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ETC |
Three and a half LED display A / D converter =VREF，VREF =100mV - C =+ C≈ 200mV 、 。 =200mV 2V， VCM=1V，VIN=0V， =200mV VIN=0V，=200mV， VIN =0V VIN =0V，0℃ 70℃ VIN =199mV，0℃ 70℃ ( 0ppm/℃） VIN =0（ LED ） VDX =1.5V 25KΩ （） 25KΩ （） -000.0 ±000.0 999 999/ 1000 ±0.2 ±1 LED ±0.2 |
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Texas Instruments |
Quadruple Half-H Drivers •1 Wide Supply-Voltage Range: 4.5 V to 36 V • Separate Input-Logic Supply • Internal ESD Protection • High-Noise-Immunity Inputs • Output Current 1 A Per Channel (600 mA for L293D) • Peak Output Current 2 A Per Channel (1.2 A for L293D) • Output Clam |
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ETC |
N-Channel Power MOSFET t(continuos)at TC=100℃ IDM(1) Drain Current(pulsed) PD Power Dissipation at TC=25℃ dv/dt(2) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max.Operating Junction Temperature Value 110 110 ±20 13.5 8.5 37 70 5.5 -55to150 150 U |
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ETCTI |
LF198JAN Monolithic Sample-and-Hold Circuits (Rev. A) |
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ETC |
SELF CONTAINED E GSM/GPRS 900/1800 OR 850/1900 BI BAND MODULE |
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Texas Instruments |
JFET Input Operational Amplifiers •1 Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offs |
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Texas Instruments |
JFET Input Operational Amplifiers •1 Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offs |
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Texas Instruments |
16-Channel 16-Bit ES-PWM Full Self-Diagnosis LED Driver 1 •23 16 Constant-Current Sink Output Channels • Sink Current Capability with Maximum DC and BC Data: – 2 mA to 45 mA (VCC ≤ 3.6 V) – 2 mA to 60 mA (VCC > 3.6 V) • Dot Correction (DC): – 7-Bit (128 Steps) with 0% to 100% Range • Global Brightness Con |
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Texas Instruments |
Wide Bandwidth Quad JFET Input Operational Amplifiers 1 •23 Internally Trimmed Offset Voltage: 5 mV Max • Low Input Bias Current: 50 pA Typ. • Low Input Noise Current: 0.01 pA/√Hz Typ. • Wide Gain Bandwidth: 4 MHz Typ. • High Slew Rate: 13 V/μs Typ. • Low Supply Current: 7.2 mA Typ. • High Input Impedan |
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Texas Instruments |
Wide Bandwidth Quad JFET Input Operational Amplifiers 1 •23 Internally Trimmed Offset Voltage: 5 mV max • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 7.2 mA • High Input Impedance: 1012Ω • Low Total Har |
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Texas Instruments |
Wide Bandwidth Dual JFET Input Operational Amplifier 1 •2 Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input |
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Texas Instruments |
Half-Bridge Gate Drivers •1 Independent High and Low Driver Logic Inputs • Bootstrap Supply Voltage up to 100-V DC • Drives Both a High-Side and Low-Side N-Channel MOSFETs • Fast Propagation Times (25 ns Typical) • Drives 1000-pF Load With 8-ns Rise and Fall Times • Excellen |
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Texas Instruments |
Half-Bridge Driver • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current |
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Desde 2024. D4U Semiconductor.
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