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ETC |
KP1878BE1 èè ìèêðîêîíòðîëëåðà. Íåîáõîäèìî ñíèìàòü ñèãíàë RST (âûñîêèé óðîâåíü íà ýòîì âûâîäå) â òîò ìîìåíò, êîãäà ïèòàíèå ìèêðîêîíòðîëëåðà UCC èìååò óðîâåíü íå ìåíåå 3,5 V. Ucc D C R1 R2 KP1878BE1 RST R1 = 40 kOm ðåçèñòîð, çàäàþùèé âûñîêèé óðîâåíü íà âûâî |
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ETC |
HIGH POWER THYRISTOR . All Diffused Structure . Spoke Amplifying Gate Configuration . High dV/dt Capability . Pressure Assembled Device CASE 5T ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) KP1500A 4000 4000 44 |
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ETC |
thyristor Vs.Time 0.012 0.009 0.006 0.003 0 0.001 0.01 0.1 t,S 1 10 Fig.1 Max. Power Dissipation On-state Current Y76KPM Vs.Mean 52 5000 120 PT(AV)(max)， W 4000 0 Fig.2 Max. heatsink TemperatureY76KPM Vs.Mean On-state Current 180 140 120 0 180 90 |
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ETC |
Transceiver ение двойных ошибок. Стандартный 22-выводной DIP корпус. Конструкция Корпус 2108.22 Конфигурация выводов ERR2 DATA 1 2 22 RX 21 W/R 20 START 19 GND 18 IN 17 NC 16 OUT1 15 OUT2 14 NC 13 Ep 12 BUSY CLK 3 PROG 4 NC 5 NC 6 NC 7 RESET 8 F4MHz 9 OSCIN 10 |
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ETC |
HIGH POWER THYRISTOR . All Diffused Structure . Center Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1 |
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ETC |
thyristor e Vs.Time 0.01 0 0.001 0.01 0.1 t,S 1 10 Fig.1 Y45KPEVs.Mean 12 Max. Power Dissipation On-state Current 3000 PT(AV)(max)， W 120 0 Fig.2 Y45KPEOn-state Current Max. heatsink Temperature Vs.Mean 140 180 Ths(max),°C 120 0 2400 180 90 60 1 |
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Desde 2024. D4U Semiconductor.
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