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ETC |
C-MOS 1M 16-BIT DYNAMIC RAM ww.DataSheet4U.net/ www.DataSheet.co.kr KM416C1200AT-6T (2/2) RAS 1 0 0 0 0 0 0 0 0 0 1 X HI-Z LCAS X 1 0 1 0 0 1 0 0 UCAS X 1 1 0 0 1 0 0 0 W X X 1 1 1 0 0 0 1 OE X X 0 0 0 1 1 1 1 DQ1-DQ8 DQ9-DQ16 STATE HI-Z STANDBY HI-Z HI-Z HI-Z REFRESH DQ-OUT |
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ETC |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL • • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampl |
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ETC |
CMOS 16M-Bit SDRAM T DATA INPUT/OUTPUT MASK ROW ADDRESS STROBE WRITE ENABLE INPUT/OUTPUT DQ0 - DQ15 : DATA m o c www.DataSheet4U.com KM416S1020BT-G10T (2/2) I/O CONTROL LWE DATA INPUT REGISTER BANK SELECT ROW BUFFER REFRESH COUNTER ROW DECODER LDQM SENSE AMP |
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Desde 2024. D4U Semiconductor.
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