| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
High Speed IGBT G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = |
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ETC |
High Speed IGBT G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = |
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ETC |
High Voltage/ Low VCE(sat) IGBT W °C °C °C q q q Mounting torque 1.13/10 Nm/lb.in. q 6 300 g °C q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s q International standard package JEDEC TO-247 High frequency IGBT with guaranteed Short Circuit SO |
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ETC |
High Speed IGBT G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = |
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Desde 2024. D4U Semiconductor.
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