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IRFU420 |
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POWER MOSFET This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
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HIGH POWER WIRE WOUND RESISTORS and Applications Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W.. Minimum resistance of 1ohm, +/-0.5% tolerance available. 10mm thickness allows excellent heat extrusion from resistor. Narrower body (IRN) will |
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P-Channel Power MOSFET |
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P-Channel Power MOSFET |
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P-Channel Power MOSFET |
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N-CHANNEL Power MOSFET s Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge (IS = 40 A, VGS = 0 V) (IF = 40A, VGS = 0 V, di/dt = 100A/µs) Integral pn-diode in MOSFET ISM VSD trr Qrr ......... |
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POWER MOSFET Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURAT |
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Avalanche Energy Rated P-Channel Power MOSFET |
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HIGH POWER WIRE WOUND RESISTOR and Applications Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W.. Minimum resistance of 1ohm, +/-0.5% tolerance available. 10mm thickness allows excellent heat extrusion from resistor. Narrower body (IRN) will |
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BEARING / BALL / AIRFRAME / ANTI-FRICTION / LIGHT AND HEAVY DUTY 19 .234 .250 .270 .335 .375 .469 .500 .625 ¬A SHOULDER DIAMETER INNER RING (APPROX) .253 .321 .381 .453 .290 .390 .561 .607 .791 .916 E 4/ INNER RING CORNER CHAMFER C 3/ OUTER RING CORNER CHAMFER +.015 -.000 .005 .015 .016 .005 .016 .022 .032 |
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Desde 2024. D4U Semiconductor.
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