| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
256Kb Data Collector 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion (1010) Read/Writes • 10 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface • Up to 1 |
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ETC |
Mass Flow Controllers and Flowmeters Attitude Insensitive Flow Sensor Product Benefits Eliminates air convection currents inside its case without sacrificing response speed. Can be mounted in any position without requiring zero adjustment. Superior Bypass Design to Operate under Lamin |
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ETC |
256Kb Data Collector 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion (1010) Read/Writes • 10 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface • Up to 1 |
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ETC |
Mass Flow Controllers and Flowmeters Attitude Insensitive Flow Sensor Product Benefits Eliminates air convection currents inside its case without sacrificing response speed. Can be mounted in any position without requiring zero adjustment. Superior Bypass Design to Operate under Lamin |
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ETC |
256Kb Bytewide FRAM w/ Real-Time Clock 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,752 x 8 bits • High Endurance 100 Billion (1011) Read/Writes • 10 year Data Retention • NoDelay™ Writes • 70 ns Access Time/ 130 ns Cycle Time • Built-in Low VDD Protection Real-Time Clock/Cale |
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Desde 2024. D4U Semiconductor.
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