No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
64Kb FRAM Serial Memory 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 10 Year Data Retention • NoDelay™ Writes • Advanced high-reliability ferroelectric process Very Fast Serial Peripheral Interface - SP |
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ETC |
MODULATOR |
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ETC |
64Kb FRAM Serial Memory 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 10 Year Data Retention • NoDelay™ Writes • Advanced high-reliability ferroelectric process Very Fast Serial Peripheral Interface - SP |
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ETC |
4Kb FRAM Serial Memory 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Writes • 10 Year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface • Up to 1 MHz maximum bus frequency • |
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ETC |
64Kb 2.7V-3.6V FRAM Serial Memory 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited read/write cycles • 10 year data retention at 85° C • NoDelay™ write • Advanced high-reliability ferroelectric process Fast Two-wire Serial Interface • Up to 1 MHz maximu |
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ETC |
16Kb FRAM Serial Memory 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 85° C • NoDelay™ write • Advanced high-reliability ferroelectric process Fast Serial Peripheral Interface - |
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ETC |
2-Phase Hybrid Stepping Motor |
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ETC |
Single lithium battery protection IC |
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ETC |
16Kb FRAM Serial 3V Memory 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 10 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface • Up to 1MHz maximum bus fre |
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ETC |
4Kb FRAM Serial 3V Memory 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Fre |
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ETC |
64Kb FRAM Serial 3V Memory 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz |
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