| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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ETC |
DIODE(ISOLATED MOLD TYPE) ute Recommended Value 1.0-1.4 10-14 2500 1.5 15 23 Electrical Characteristics Symbol IRRM VFM Rth j-c Item Repetitive Peak Reverse Current, max. Forward Voltage Drop, max. Thermal Impedance, max. Conditions at VDRM, single phase, half wave, Tj 125 |
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ETC |
NPN silicon high-frequency low-power transistors |
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ETC |
240 X 128DOT 1/128 DUTY |
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ETC |
DIODE(ISOLATED MOLD TYPE) ute Recommended Value 1.0-1.4 10-14 2500 1.5 15 23 Electrical Characteristics Symbol IRRM VFM Rth j-c Item Repetitive Peak Reverse Current, max. Forward Voltage Drop, max. Thermal Impedance, max. Conditions at VDRM, single phase, half wave, Tj 125 |
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ETC |
DIODE(ISOLATED MOLD TYPE) ute Recommended Value 1.0-1.4 10-14 2500 1.5 15 23 Electrical Characteristics Symbol IRRM VFM Rth j-c Item Repetitive Peak Reverse Current, max. Forward Voltage Drop, max. Thermal Impedance, max. Conditions at VDRM, single phase, half wave, Tj 125 |
|
|
|
|
ETC |
DIODE(ISOLATED MOLD TYPE) ute Recommended Value 1.0-1.4 10-14 2500 1.5 15 23 Electrical Characteristics Symbol IRRM VFM Rth j-c Item Repetitive Peak Reverse Current, max. Forward Voltage Drop, max. Thermal Impedance, max. Conditions at VDRM, single phase, half wave, Tj 125 |
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|
|
ETC |
DIODE(ISOLATED MOLD TYPE) ute Recommended Value 1.0-1.4 10-14 2500 1.5 15 23 Electrical Characteristics Symbol IRRM VFM Rth j-c Item Repetitive Peak Reverse Current, max. Forward Voltage Drop, max. Thermal Impedance, max. Conditions at VDRM, single phase, half wave, Tj 125 |
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Desde 2024. D4U Semiconductor.
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