| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
Echo Processor eb-ic.com.cn www.DataSheet4U.com CD2399GP ： R 10KΩ~50KΩ。 10KΩ。，。 ： R/ TD TABLE 1 Fck(MHz) R(k) Td(mS) THD(%) Fck(MHz) R(k) Td(Ms) THD(%) Fck(MHz) R(k) Td(mS) THD(%) Fck(MHz) R(k) Td(mS) THD(%) Fck(MHz) R(k) Td(mS) THD(%) Fck(MHz) R(k) Td(mS) THD |
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ETC |
Surround Reverb sound processor 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VCC REF AGND DGND CLK-O VCO CC1 CC0 OP1-OUT OP1-IN OP2-IN OP2-OUT LPF2-IN LPF2-OUT LPF1-OUT LPF1-IN I/O — — （=1/2VCC） — — O I — 1 — 0 O 1 I 1 I 2 O 2 I 2 O 2 |
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ETC |
2SD2395 |
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ETC |
Surround Reverb sound processor （Power On）： =400ms （Ta=25℃） VCC ICC Pd Topr Tstg VCC fck 6.5 100 1.7 -20~75 -25~125 4.5 5 4 5.5 5 （VCC=5.0V, fin=1kHz, Vi=100mVrms, fck=4MHz, Ta=25℃） VCC 4.5 Icc Gv Vomax RL=47KΩ -0.5 THD=10% |
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ETC |
SINGLE DIGIT LED DISPLAYS 150 150 200 50 150 150 150 150 150 Electro-optical Data(At 10mA) Vf (v) Typ. Max. 6.8 8.0 8.8 8.8 8.4 8.0 6.8 8.0 3.4 4.4 4.4 4.2 4.4 3.4 4.0 10.0 10.0 10.0 10.0 10.0 10.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 Iv. Typ. Per.Seg. (mcd) 6.0 8.0 12.0 10.0 12.0 18 |
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ETC |
2SD2349 oltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time ICP=7A ;IB1=1.4A;fH=15.75kHz tf Fall time CONDITIONS IE=300mA , IC=0 IC=7A ; |
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Texas Instruments |
P-Channel Power MOSFET •1 Low On-Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >2 kV HBM – Rated >2 kV CDM • Pb Terminal Plating • Halogen Free • RoH |
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Texas Instruments |
3.3-V CAN Bus Transceivers •1 Operates with a single 3.3 V Supply • Compatible With ISO 11898-2 Standard • Low Power Replacement for the PCA82C250 Footprint • Bus Pin ESD Protection Exceeds ±16 kV HBM • High Input Impedance Allows for Up to 120 Nodes on a Bus • Adjustable Driv |
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Texas Instruments |
3.3-V CAN Transceiver •1 Single 3.3-V Supply Voltage • Bus Pins Fault Protection Exceeds ±36 V • Bus Pins ESD Protection Exceeds ±16 kV HBM • Compatible With ISO 11898-2 • GIFT/ICT Compliant • Data Rates up to 1 Mbps • Extended –7 V to 12 V Common Mode Range • High-Input |
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ETC |
SINGLE DIGIT LED DISPLAYS 150 150 200 50 150 150 150 150 150 Electro-optical Data(At 10mA) Vf (v) Typ. Max. 6.8 8.0 8.8 8.8 8.4 8.0 6.8 8.0 3.4 4.4 4.4 4.2 4.4 3.4 4.0 10.0 10.0 10.0 10.0 10.0 10.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 Iv. Typ. Per.Seg. (mcd) 6.0 8.0 12.0 10.0 12.0 18 |
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Texas Instruments |
3.3-V CAN Transceiver •1 Single 3.3-V Supply Voltage • Bus Pins Fault Protection Exceeds ±36 V • Bus Pins ESD Protection Exceeds ±16 kV HBM • Compatible With ISO 11898-2 • GIFT/ICT Compliant • Data Rates up to 1 Mbps • Extended –7 V to 12 V Common Mode Range • High-Input |
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Texas Instruments |
3.3-V CAN Transceiver •1 Single 3.3-V Supply Voltage • Bus Pins Fault Protection Exceeds ±36 V • Bus Pins ESD Protection Exceeds ±16 kV HBM • Compatible With ISO 11898-2 • GIFT/ICT Compliant • Data Rates up to 1 Mbps • Extended –7 V to 12 V Common Mode Range • High-Input |
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Texas Instruments |
Extended Common-Mode RS-485 Transceivers •1 Common-Mode Voltage Range ( –20 V to 25 V) More Than Doubles TIA/EIA-485 Requirement • Receiver Equalization Extends Cable Length, Signaling Rate (SN65HVD2[3,4]) • Reduced Unit-Load for up to 256 Nodes • Bus I/O Protection to Over 16-kV HBM • Fails |
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Texas Instruments |
P-Channel Power MOSFET •1 Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Descript |
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Texas Instruments |
P-Channel Power MOSFET •1 Low On-Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >2 kV HBM – Rated >2 kV CDM • Pb Terminal Plating • Halogen Free • RoH |
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Texas Instruments |
P-Channel Power MOSFET •1 Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, |
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Texas Instruments |
3.3-V CAN Transceivers D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) D Operates With a 3.3-V Supply D Low Power Replacement for the PCA82C250 Footprint D Bus/Pin E |
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Texas Instruments |
3.3-V CAN Transceivers D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) D Operates With a 3.3-V Supply D Low Power Replacement for the PCA82C250 Footprint D Bus/Pin E |
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Texas Instruments |
3.3-V CAN Bus Transceivers •1 Operates with a single 3.3 V Supply • Compatible With ISO 11898-2 Standard • Low Power Replacement for the PCA82C250 Footprint • Bus Pin ESD Protection Exceeds ±16 kV HBM • High Input Impedance Allows for Up to 120 Nodes on a Bus • Adjustable Driv |
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ETC |
Technical Specifications for 5 kA/ Normal-Duty Distribution 4.5 kV and 5 kV VariSTAR MOV Disks NE series VariSTAR disks, when applying disks in a porcelain housed arrester, where the dielectric strength of the material in direct contact with the disks is equal to the dielectric strength of air. Electrical properties for AV5NG and AV5NE series |
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Desde 2024. D4U Semiconductor.
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