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NPN Transistor IB=1.38A ×îСֵ 1500 6 66 8 5 1 ×î´óÖµ 1 200 28 1 1 2 0.8 8 ¦Ì ¦Ì V V V S S µ¥Î» V V mA mA V(BR)CBO V(BR)EBO ICBO IEBO Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ×èÄá¶þ¼«¹ÜÕýÏòѽµ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ hFE(1) hFE(2) VCE(sat) VBE(sat) -VF |
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2SD1557 |
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LED LIGHT BAR & BAR GRAPH ARRAYS 0 660 655 700 568 585 635 660 660 655 700 568 585 635 660 660 655 700 568 585 635 660 660 Electro-optical Data(At 10mA) Drawing Vf Iv. Typ. No. (v) Pd If Ifp Per.Seg. (nm) (mw) (mA) (mA) Typ. Max. (mcd) 40 90 30 35 45 20 20 40 90 30 35 45 20 20 40 9 |
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NPN Silicon Transistor |
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METAL OXIDE VARISTOR 7 8 8 10 20ø 6 6 6 6 6 6 6 6 6 7 7 7 7 7 8 8 10 Datasheet pdf - http://www.DataSheet4U.net/ METAL OXIDE VARISTOR SPECIFICATION - 5ø JNR VARISTOR Spec. Varistor Voltage V 0.1mA ACrms Part No. (V) (V) DC (V) Maximum allowable Voltage Maximum Clampi |
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NPN Transistor |
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ETC |
(OSDxx-E) Silicon Photodetectors |
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ETC |
2SD1593 |
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SINGLE DIGIT LED DISPLAYS 150 150 200 50 150 150 150 150 150 Electro-optical Data(At 10mA) Vf (v) Typ. Max. 6.8 8.0 8.8 8.8 8.4 8.0 6.8 8.0 3.4 4.4 4.4 4.2 4.4 3.4 4.0 10.0 10.0 10.0 10.0 10.0 10.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 Iv. Typ. Per.Seg. (mcd) 6.0 8.0 12.0 10.0 12.0 18 |
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SINGLE DIGIT LED DISPLAYS 150 150 200 50 150 150 150 150 150 Electro-optical Data(At 10mA) Vf (v) Typ. Max. 6.8 8.0 8.8 8.8 8.4 8.0 6.8 8.0 3.4 4.4 4.4 4.2 4.4 3.4 4.0 10.0 10.0 10.0 10.0 10.0 10.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 Iv. Typ. Per.Seg. (mcd) 6.0 8.0 12.0 10.0 12.0 18 |
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DOT MATRIX LCD DRIVER |
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Pan Overseas Zinc Oxide Varistors ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low leakage current. Excellent voltage ratio. Fast respond to the rapidly rising surge voltage. High performance in clamping voltage characteristics. High performance in surge current withstanding capability. Applications ¡¯ ¡¯ ¡¯ ¡¯ |
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Pan Overseas Zinc Oxide Varistors ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low leakage current. Excellent voltage ratio. Fast respond to the rapidly rising surge voltage. High performance in clamping voltage characteristics. High performance in surge current withstanding capability. Applications ¡¯ ¡¯ ¡¯ ¡¯ |
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Diode 00 Instantaneous on-state currant,amperes 1000 Tj=150°C Transient thermal impedance,°C/W Max. junction To case Thermai Impedance Vs.Time 0.15 0.15 DIODE MODULE Instantaneous on-state voltage,volts 0.12 0.09 0.06 0.03 0 0.001 0.01 0.1 time S |
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Large Area InGaAs PIN Photodiodes diameter ww.DataSheet4U.com PART NUMBER Fermionics Opto-Technology Large Area InGaAs PIN Photodiodes TYPICAL CHARACTERISTICS Fig. 1 Spectral Response (R vs. λ) 10 FD1500W Responsivity, R (A/W) 1 0.1 0.01 0.001 800 1000 1200 1400 1600 1800 Wavelength, |
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(SED1560 - SED1562) Low-power operation ........................................................................................................................................ 7 1.3 System Block Diagrams ..................................................................................... |
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(SED1560 - SED1562) Low-power operation ........................................................................................................................................ 7 1.3 System Block Diagrams ..................................................................................... |
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ETC |
DOT MATRIX LCD DRIVER |
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ETC |
NPN Transistor |
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ETC |
METAL OXIDE VARISTOR 7 8 8 10 20ø 6 6 6 6 6 6 6 6 6 7 7 7 7 7 8 8 10 Datasheet pdf - http://www.DataSheet4U.net/ METAL OXIDE VARISTOR SPECIFICATION - 5ø JNR VARISTOR Spec. Varistor Voltage V 0.1mA ACrms Part No. (V) (V) DC (V) Maximum allowable Voltage Maximum Clampi |
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Desde 2024. D4U Semiconductor.
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