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ETC |
(NMXSO Series) DC/DC Converter 5w Dual Industry Standard Pinout Pin Compatible with NMXU Output Regulation 0.5% 1kVDC Isolation Single or Dual Output Short Circuit Protected Low Profile Package Efficiency to 75% Power Density 0.53W/cm3 5V & 12V input 5V, 12V and 15V Output Footprint 9.52c |
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ETC |
High-Power Red Laser Diode Supports use the material characteristics of the recording medium must be changed in a period of time that becomes shorter as the recording speed is increased. Sony has already released laser diodes with optical power output levels of 100, 140, and 200 mW to |
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Texas Instruments |
2:16 Low Additive Jitter LVDS Buffer 1 • 2:16 Differential Buffer • Low Additive Jitter: <300 fs RMS in 10 kHz to 20 MHz • Low Output Skew of 55 ps (Max) • Universal Inputs Accept LVDS, LVPECL, LVCMOS • Selectable Clock Inputs Through Control Pin • 16 LVDS Outputs, ANSI EIA/TIA-644A Sta |
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Texas Instruments |
2:8 Low Additive Jitter LVDS Buffer •1 2:8 Differential Buffer • Low Additive Jitter: < 300-fs RMS in 10-kHz to 20-MHz • Low Output Skew of 45 ps (Maximum) • Universal Inputs Accept LVDS, LVPECL, and LVCMOS • Selectable Clock Inputs Through Control Pin • 8 LVDS Outputs, ANSI EIA/TIA-64 |
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ETC |
Si NPN Planar Transistor |
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ETCTI |
SN65MLVD128/129 - 1:8 LVTTL to M-LVDS Repeater Dual 1:4 LVTTL to M-LVDS Repeate |
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ETC |
Power Rectifier Diodes Durchlaßspannung Schleusenspannung Ersatzwiderstand Sperrstrom Durchbruchspannung Characteristic values on-state voltage threshold voltage slope resistance reverse current breakdown voltage tvj = t vj max , iF = 600 A tvj = t vj max tvj = t vj max t |
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ETC |
2SD1297 |
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ETC |
Metal Oxide Varistors gy Capacitance (JOULE) (Reference) @1KHZ 1 Time 2 Times 10/1000 µS 210 240 255 300 315 330 360 380 430 470 495 520 550 580 620 650 685 750 800 850 900 (pf) 5200 5100 4800 4300 3900 3200 3100 2800 2700 2400 2200 2000 1900 1800 1300 1200 1100 1000 80 |
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ETC |
NPN Transistor |
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ETC |
LCD Module User Manual ………………………….…………………………..9 4.4 Display Memory Map………………………………….………………………….……………………………9 4.5 Display Commands…………..…………………….…………………………….…………………………..10 4.6 Basic Operating Sequence…………...………………………….……………….………………………….11 5. Inspection Standards………………….…………… |
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ETC |
LCD Module H/L H/L H/L H/L H/L H H L -10.0V INSTRUCTION Ground contact GND Power Supply Voltage Adjust Contrast H:DATA L:COMMAND H:READ L:WRITE IC select signal DATA 0 DATA 1 DATA 2 DATA 3 DATA 4 DATA 5 DATA 6 DATA 7 Select Signal 1,High effective Select Sign |
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ETC |
METAL OXIDE VARISTOR 7 8 8 10 20ø 6 6 6 6 6 6 6 6 6 7 7 7 7 7 8 8 10 Datasheet pdf - http://www.DataSheet4U.net/ METAL OXIDE VARISTOR SPECIFICATION - 5ø JNR VARISTOR Spec. Varistor Voltage V 0.1mA ACrms Part No. (V) (V) DC (V) Maximum allowable Voltage Maximum Clampi |
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ETCTI |
SN65MLVD128/129 - 1:8 LVTTL to M-LVDS Repeater Dual 1:4 LVTTL to M-LVDS Repeate |
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ETC |
Integrated IGBT Power Structures • • • • • • • High performance IGBT inverter bridge Integrated gate drive with fault monitoring & protection System status / troubleshooting LEDs to verify or monitor proper operation Isolated gate drive power supplies Low inductance laminated bus O |
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Texas Instruments |
HDMI Companion •1 HDMI 1.3 and HDMI 1.4 Data Rate • HDMI High-Speed Differential Signals –3-dB Bandwidth Exceeds 6.4 Gbps • Excellent Matching Capacitance (0.05 pF) in Each Differential Signal Pair • Internal Boost Converter to Generate 5 V From a 2.3-V to 5.5-V Ba |
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Texas Instruments |
Low Additive Jitter LVDS Buffer • High-performance LVDS clock buffer family: up to 2 GHz – 2:12 differential buffer (LMK1D1212) – 2:16 differential buffer (LMK1D1216) • Supply voltage: 1.71 V to 3.465 V • Low additive jitter: < 60 fs RMS maximum in 12- kHz to 20-MHz at 156.25 MHz – |
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ETC |
SINGLE DIGIT LED DISPLAYS 150 150 200 50 150 150 150 150 150 Electro-optical Data(At 10mA) Vf (v) Typ. Max. 6.8 8.0 8.8 8.8 8.4 8.0 6.8 8.0 3.4 4.4 4.4 4.2 4.4 3.4 4.0 10.0 10.0 10.0 10.0 10.0 10.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 Iv. Typ. Per.Seg. (mcd) 6.0 8.0 12.0 10.0 12.0 18 |
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ETC |
4 1/2 Digit A/D Converter Set |
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ETC |
Pan Overseas Zinc Oxide Varistors ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low leakage current. Excellent voltage ratio. Fast respond to the rapidly rising surge voltage. High performance in clamping voltage characteristics. High performance in surge current withstanding capability. Applications ¡¯ ¡¯ ¡¯ ¡¯ |
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Desde 2024. D4U Semiconductor.
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