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N-Channel Depletion-Mode MOSFET Transistors D D D D D High Breakdown Voltage: 260 V Normally “On” Low rDS Switch: 3.5 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance TO-226AA (TO-92) 1 Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Volt |
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SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS 9 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1 |
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SOT23 PNP TRANSISTORS 9 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1 |
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SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR IC=0, f=1MHz IC=-30mA IB1 = -IB2= -1.5mA VCC=-10V UNIT V V V mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). BreakdownVoltages V(BR)CEO Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter B |
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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 PNP TRANSISTORS 9 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1 |
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SOT23 NPN TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 NPN TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forw |
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SOT23 PNP TRANSISTOR IC=0, f=1MHz IC=-30mA IB1 = -IB2= -1.5mA VCC=-10V UNIT V V V mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). BreakdownVoltages V(BR)CEO Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter B |
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SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS 9 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1 |
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Betriebsstundenzahler und Bestellbezeichnungen Frontrahmen (mm) BZ48 BZ48/1 BZ52 BZ52/1 BZ48/24 BZ48/1/24 48 x 48 48 x 48 52 x 52 52 x 52 48 x 48 48 x 48 Anschluss Klemmen AMP-Stecker 6,3mm Klemmen AMP-Stecker 6,3mm Klemmen AMP-Stecker 6,3mm Spannungsart AC AC AC AC DC DC |
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