No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
SILICON POWER TRANSISTOR eakdown voltage IC=-10mA, IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -20 µA IEBO hFE-1 Emitte |
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ETC |
500mW UNIBLOC SILICON OXIDE-PASSIVATED ZENER REGULATOR DIODES |
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Texas Instruments |
450-mA High-Voltage Low-Dropout Regulator 2 Applications •1 Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Class |
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Texas Instruments |
450-mA High-Voltage Low-Dropout Regulator 2 Applications •1 Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Class |
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Texas Instruments |
450-mA High-Voltage Low-Dropout Regulator 2 Applications •1 Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Class |
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