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Low voltage high current power MOSFET st 6 (V) 8 10 102 101 175ඓ 25ඓ 100 0.2 0.4 4. 0.6 0.8 VSD ජ Notes : 1. VGS = 0V 2. 250த s Pulse Test 1.0 1.2 1.4 1.6 (V) 4000 3000 2000 1000 0 10-1 C oss C iss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ජ Notes |
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Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules CT) / (1CT:1CT) (1CT:1CT) / (1CT:1CT) (2CT:1CT) / (1CT:1CT) (1CT:1CT) / (2CT:1CT) (1.25CT:1CT) / (1CT:1CT) Circuit Schematic A B B B B PRI/SEC Cw/w (pF typ) 25 25 25 25 25 PRI DCR (Ωmax) 1.0 1.0 1.3 1.3 1.3 01/01 |
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LED Duplex Digital Radio Clock |
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High Performance Infrared TOP IR LED ro-Optical www.DataSheet4U.com Item Characteristics [Ta=25°C] Symbol Condition Minimum IF=50mA DC Forward Voltage VF IF=100mA, tp=20ms Reverse Current IR VR=5V IF=50mA DC 15.0 Total Radiated Power PO IF=100mA, tp=20ms IF=50mA DC Radiant Intensity IE |
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Filter specification tre frequency at ambient temperature TA Pass band Pass band ripple ( p –p ) : Bandwidth at ambient temperature TA 1 dB 3 dB 25 dB 40 dB 45 dB Relative attenuation fC ... fC ± fC ± 2,05 MHz ... fC ± fC ± 2,65 MHz ... fC ± fC ± 3,0 MHz ... fC ± fC ± 3,2 |
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TRANSISTOR MODULES |
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TRANSISTOR MODULES |
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TRANSISTOR MODULES |
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Marketing Information ward off-state and reverse voltages non-repetitive peak forward offstate voltage non-repetitive peak reverse voltage RMS on-state current average on-state current surge current ∫i2t-value current voltage 410 A 250 A 261 A 8000 A 7000 A 320000 A2s 24 |
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Desde 2024. D4U Semiconductor.
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