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ETC |
Low-frequency amplification case - rated bipolar transistors B=1500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A IC=4A, IB=0.8A IC=4A, IB=0.8A VCC=100V, IC=4A 2IB1=-IB2=0.8A VCE=10V, IC=100mA f=0.3MHz ÎÞÎý»ª¾§Î¢µç×Ó¹É ·ÝÓÐÏÞ¹«Ë¾ µØÖ · ½-ËÕÊ¡ÎÞýÐÁºÏªÂ · 14 ºÅ µç»° µÚ 1 Ò³ 0510 5807228-2268 2299 ¹² 2 Ò³ æÕ«´ 0510 5800360 |
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ETC |
NPN Transistor |
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ETC |
NPN Transistor =0 VEB=5V, IC=0 VCE=5V, IC=1A IC=6A, IB=1.2A IC=6A, IB=1.2A VCC=120V, IC=6A 2IB1=-IB2=1.5A VCE=10V, IC=100mA f=0.3MHz ÎÞÎý»ª¾§Î¢µç×Ó¹É ·ÝÓÐÏÞ¹«Ë¾ µØÖ · ½-ËÕÊ¡ÎÞýÐÁºÏªÂ · 14 ºÅ µç»° µÚ 1 Ò³ 0510 5807228-2268 2299 ¹² 2 Ò³ æÕ«´ 0510 5800360 »ª¾§ ·ÖÁ¢Æ÷ |
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Texas Instruments |
1A Peak Sink/Source PCDDR3 Termination Regulator 1 • VDD Range – 3.0V to 3.6V • RON 1.75Ω typical • Channel Count – 26 • VDDQ – Input Voltage 1.2V to 3.5V • VTT – VDDQ/2 typical with 1A sink/source capability • VREF – VDDQ/2±1% × VDDQ • Switch Time – (TON/OFF) 100ns Max • IDD Supply Current – High |
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ETC |
Low-frequency amplification shell rated bipolar transistors 9 9 P$ P$ 9 9 9 6 6 0+] ⬉ᵕüᵕডⓣ⬉⌕ ,&%2 থᇘᵕüᵕডⓣ⬉⌕ ,(%2 Ⳉ⌕⬉⌕Ⲟ K)( K)( 9%( VDW 9) WI WV I7 ⬉ᵕüথᇘᵕय़ 9&( VDW ᵕüথᇘᵕय़ ሐѠᵕㅵℷय़ ϟᯊ ᄬᯊ ⡍ᕕ⥛ ⠜ᴀ:200705B 2/6 DataSheet |
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ETC |
Silicon NPN Transistor |
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ETC |
Low-frequency silicon NPN power transistor |
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ETC |
NPN silicon low frequency high power transistor |
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ETC |
Silicon NPN Transistor ≤0.1% ○ PBDE ≤0.1% ○ HBCDD ≤0.1% ○ DEHP DBP BBP ≤0.1% ○ ≤0.1% ○ ≤0.1% ○ ○ ○ ○○ ○ ○ ○ ○ ○○ ○○ ○○ ○ ○ ○ ○ ○○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ×○○○ ○ ○ ○ ○ ○○ ○： SJ/T11363-2006 。 ×： SJ/T11363-2006 。 （Pb）， RoHS 。 2012 2 /4 |
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ETC |
NPN Transistor |
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ETC |
NPN silicon low frequency high power transistor |
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Texas Instruments |
High-PSRR Low-Dropout Linear Regulator • 200-mA low-dropout regulator with EN • Multiple output voltage versions available: – Fixed outputs of 1.2 V to 4.5 V – Adjustable outputs from 1.20 V to 6.5 V • Inrush current protection with EN toggle • Low IQ: 40 μA • High PSRR: – 66 dB at 1 kHz |
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Texas Instruments |
High-PSRR Low-Dropout Linear Regulator • 200-mA low-dropout regulator with EN • Multiple output voltage versions available: – Fixed outputs of 1.2 V to 4.5 V – Adjustable outputs from 1.20 V to 6.5 V • Inrush current protection with EN toggle • Low IQ: 40 μA • High PSRR: – 66 dB at 1 kHz |
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Texas Instruments |
1:2 MUX/DEMUX Switch 1 • Compatible with DDR3 SDRAM Standard (JESD79-3D) • Wide Bandwidth of 1.675 GHz • Low Propagation Delay (tpd = 40 ps Typ) • Low Bit-to-Bit Skew (tsk(o) = 6 ps Typ) • Low and Flat ON-State Resistance (rON = 8 Ω Typ) • Low Input/Output Capacitance (C |
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ETC |
NPN silicon low-frequency high-power transistors |
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ETC |
NPN silicon low-frequency high-power transistors |
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ETC |
D3402 fH=15.75KHz IC=6A, 2IB1=-IB2=3A fH=15.75KHz VCE=10V, IC=0.1A IC=1A IC=6A IB=1.2A IB=1.2A ×îСֵ 1700 5 66 10 5 1.7 ×î´óÖµ 1 200 30 5 1.5 2 0.7 12 ¦Ì ¦Ì V V V S S µ¥Î» V V mA mA V(BR)CBO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) -VF tf ts f |
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ETC |
NPN SILICON TRANSISTOR ѹ * 1.2 1.6 Cob ¹²»ù¼«Êä³öµçÈÝ ÌØÕ÷ƵÂÊ µ¼Í¨Ê±ä ÔØÁ÷×ÓÖü´æʱ¼ä ϽµÊ±¼ä fT ton ts tf 65 4 4 0.9 VCC=125V, IC=2A, IB1=-IB2=0.4A ·Öµ £º H1£¨ 10--16£© H2£¨ 14--21£© H3£¨ 19--26£© H4£¨ 24--31£© H5£¨ 29--40£© Free Datasheet http://www.d |
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ETC |
Low-power silicon NPN transistor |
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Texas Instruments |
High-PSRR Low-Dropout Linear Regulator • 200-mA low-dropout regulator with EN • Multiple output voltage versions available: – Fixed outputs of 1.2 V to 4.5 V – Adjustable outputs from 1.20 V to 6.5 V • Inrush current protection with EN toggle • Low IQ: 40 μA • High PSRR: – 66 dB at 1 kHz |
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Desde 2024. D4U Semiconductor.
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