| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
2SD5702 mitter cut-off current DC current gain DC current gain Transition frequency Diode forward voltage Fall time CONDITIONS IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=10V IF=6A IC=4A ;IB1=0.8A;IB2=- |
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ETC |
Transistors |
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ETC |
2SD2092 / KTD2092 |
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ETC |
2SD358 |
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ETC |
Silicon Transistor For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed: 260°C / 10 seconds at te |
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ETC |
2SD1877 om TeL:(852)2341 9276 Fax:(852)2797 8153 . e_mail:[email protected] |
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ETC |
2SD2395 |
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ETC |
Si NPN Planar Transistor |
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ETC |
2SD1557 |
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ETC |
2SD1297 |
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ETC |
NPN Transistor |
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ETC |
NPN Transistor |
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ETC |
Triple Diffused Mesa Type Silicon Transistor |
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ETC |
NPN Transistor |
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ETC |
Epitaxial Planar Silicon Transistor |
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ETC |
2SD2349 oltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time ICP=7A ;IB1=1.4A;fH=15.75kHz tf Fall time CONDITIONS IE=300mA , IC=0 IC=7A ; |
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ETC |
NPN Silicon Transistor |
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ETC |
NPN Transistor |
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ETC |
2SD1593 |
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ETC |
2SD408 |
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Desde 2024. D4U Semiconductor.
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