ETC 2N5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N5557	ETC	SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS d notes apply CASE 20.03 TO ·72 2N5556 thru 2N5558 (continued) ELECTRICAL CHARACTERISTICS (TA = 25'C unle55 otherwISe noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -10 !lAdc, VDS = 0) Gate -Source Cutoff Voltage (VDS
2	2N5609	ETC	Silicon PNP Transistors With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO ICP IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak col
3	2N5305	ETC	SILICON DARLINGTON TRANSISTORS
4	2N5306	ETC	SILICON DARLINGTON TRANSISTORS
5	2N5558	ETC	SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
6	2N5670	ETC	SILICON N-CHANNEL JUNCTION FET
7	2N5669	ETC	SILICON N-CHANNEL JUNCTION FET
8	2N5362	ETC	Silicon N-channel junction field-effect transistors
9	2N5360	ETC	Silicon N-channel junction field-effect transistors
10	2N5359	ETC	Silicon N-channel junction field-effect transistors
11	2N5358	ETC	Silicon N-channel junction field-effect transistors
12	2N5901	ETC	GERMANIUM PNP POWER TRANSISTORS
13	2N5364	ETC	Silicon N-channel junction field-effect transistors
14	2N5356	ETC	PNP Silicon Transistor
15	2N5355	ETC	PNP Silicon Transistor
16	2N5015	ETC	0.5AMP HIGH VOLTAGE NPN TRANSISTOR
17	2N5861	ETC	NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR
18	2N5846	ETC	NPN SILICON RF POWER TRANSISTORS
19	2N5845A	ETC	NPN SILICON ANNULAR TRANSISTORS
20	2N5800	ETC	SILICON P-CHANNEL JUNCTION FET