ETC 1N5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	1N5782	ETC	PNPN 4-LAYER DIODES • Low Breakover (Switching) Voltage - 10 to 15 ·Volt Ratings • Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ) • Low Junction Capacitance - 45 pF (Typ) • Low Breakover Currents • Subminiature Glass Package MAXIMUM RATINGS ITA =250 C un
2	1N5869A	ETC	500mW UNIBLOC SILICON OXIDE-PASSIVATED ZENER REGULATOR DIODES itive with respect to anode.) MOUNTING POSITION, Any WEIGHT, 0.18 gram lapprox) FIGURE 1 - POWER- DERATING J 800 ~""8" "- 3' .§ , , - V ~ z '>'K. :;0:: 600 ill 0 L"318" L" 114" "- """ ~"" ~'" 400 . """~"'" ''x"" 200 .. '" '~" o " o 20
3	1N5761A	ETC	SILICON 3-LAYER BILATERAL TRIGGERS
4	1N5786	ETC	PNPN 4-LAYER DIODES • Low Breakover (Switching) Voltage - 10 to 15 ·Volt Ratings • Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ) • Low Junction Capacitance - 45 pF (Typ) • Low Breakover Currents • Subminiature Glass Package MAXIMUM RATINGS ITA =250 C un
5	1N5780	ETC	PNPN 4-LAYER DIODES • Low Breakover (Switching) Voltage - 10 to 15 ·Volt Ratings • Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ) • Low Junction Capacitance - 45 pF (Typ) • Low Breakover Currents • Subminiature Glass Package MAXIMUM RATINGS ITA =250 C un
6	1N5866A	ETC	500mW UNIBLOC SILICON OXIDE-PASSIVATED ZENER REGULATOR DIODES
7	1N5859A	ETC	500mW UNIBLOC SILICON OXIDE-PASSIVATED ZENER REGULATOR DIODES
8	1N5464A	ETC	SILICON EPICAP DIODES
9	1N5472A	ETC	SILICON EPICAP DIODES
10	1N5446A	ETC	SILICON EPICAP DIODES
11	1N5443A	ETC	SILICON EPICAP DIODES
12	1N5B67A	ETC	500mW UNIBLOC SILICON OXIDE-PASSIVATED ZENER REGULATOR DIODES
13	1N5474A	ETC	SILICON EPICAP DIODES DEC dImenSIOns and notes apply CASE 51-02 00 ·7 1-37 1N5461A, S, C thru 1N5476A, B, C (continued) **ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Ch_istic-AII Types Reverse Breakdown Voltage Reverse Voltage Leakage Current Saries I
14	1N5465A	ETC	SILICON EPICAP DIODES DEC dImenSIOns and notes apply CASE 51-02 00 ·7 1-37 1N5461A, S, C thru 1N5476A, B, C (continued) **ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Ch_istic-AII Types Reverse Breakdown Voltage Reverse Voltage Leakage Current Saries I
15	1N5883A	ETC	500mW UNIBLOC SILICON OXIDE-PASSIVATED ZENER REGULATOR DIODES
16	1N5885A	ETC	500mW UNIBLOC SILICON OXIDE-PASSIVATED ZENER REGULATOR DIODES
17	1N5470A	ETC	SILICON EPICAP DIODES DEC dImenSIOns and notes apply CASE 51-02 00 ·7 1-37 1N5461A, S, C thru 1N5476A, B, C (continued) **ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Ch_istic-AII Types Reverse Breakdown Voltage Reverse Voltage Leakage Current Saries I
18	1N5760	ETC	SILICON 3-LAYER BILATERAL TRIGGERS
19	1N5760A	ETC	SILICON 3-LAYER BILATERAL TRIGGERS
20	1N5762A	ETC	SILICON 3-LAYER BILATERAL TRIGGERS