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ET M20 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
FCM2015HE

ETC
Data Travo Flyback
Datasheet
2
MIP2M20MS

Panasonic
Silicon MOS FET
 AC input detecting function By connecting SO terminal, it is able to select functions as below: 1) Boot up and stop operation according to AC input or output (shortcircuit SO teminal to VDD terminal) 2) Signal output form SO terminal when AC input
Datasheet
3
WM201-RTL8723-1

Winsonic
11b/g/n WLAN and Bluetooth v2.1 / 3.0 / 4.0 single chip solution
General






 Complies with PCI Express Base Specification Revision 1.1 for WLAN Complies with USB 1.1 Specification Revision 1.1 for Bluetooth. Form factor: Half-Mini card. Bus Interface: Wi-Fi: PCIe bus interface. BT: USB bus interface. Win
Datasheet
4
SUM20K8NE-C

SeCoS
Dual-N Enhancement Mode Power MOSFET

 20V/760mA RDS(ON)≦450mΩ@VGS=4.5V RDS(ON)≦650mΩ@VGS=2.5V RDS(ON)≦1300mΩ@VGS=1.8V
 Reliable and Rugged
 Green Device Available
 ESD Protection MARKING 20K SOT-363 A E L B F C H DG K J PACKAGE INFORMATION Package MPQ SOT-363 3K Leader
Datasheet
5
LM20146

Texas Instruments
Adjustable Frequency Synchronous Buck Regulator
1
•2 Input Voltage Range 2.95V to 5.5V
• Accurate Current Limit Minimizes Inductor Size
• 97% Peak Efficiency
• Adjustable Switching Frequency (250 kHz to 750 kHz)
• 16mΩ and 20mΩ Integrated FET Switches
• Starts up into Pre-biased Loads
• Output Vol
Datasheet
6
57BYGHM203-04

HeTai
HYBRID STEPPING MOTOR
Datasheet
7
WNM2030-3

ElecSuper
N-channel MOSFET

 20V, RDS(ON)=125mΩ(Typ.) @ VGS=4.5V RDS(ON)=190mΩ(Typ.) @VGS=2.5V
 High density cell design for low RDS(on)
 Material: Halogen free
 Reliable and rugged
 Avalanche Rated
 Low leakage current 3. Applications
 PWM applications
 Load switch
Datasheet
8
M2080

Integrated Circuit Solution Inc
VCSO FEC PLL WITH AUTOSWITCH FOR SONET/OTN
◆ Integrated SAW delay line; Output of 15 to 700 MHz * ◆ Low phase jitter < 0.5 ps rms typical (12kHz to 20MHz or 50kHz to 80MHz) ◆ LVPECL clock output (CML and LVDS options available) ◆ Pin-selectable PLL divider ratios support FEC ratios
• M2080/85
Datasheet
9
M2082

Integrated Circuit Solution Inc
VCSO FEC PLL WITH AUTOSWITCH FOR SONET/OTN
◆ Integrated SAW delay line; Output of 15 to 700 MHz * ◆ Low phase jitter < 0.5 ps rms typical (12kHz to 20MHz or 50kHz to 80MHz) ◆ LVPECL clock output (CML and LVDS options available) ◆ Pin-selectable PLL divider ratios support FEC ratios
• M2080/85
Datasheet
10
ADM20N06E

ADV
N-Channel MOSFET
Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵
Datasheet
11
ADM20N06D

ADV
N-Channel MOSFET
r Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵
Datasheet
12
WNM2016

Will Semiconductor
N-Channel MOSFET
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 SOT-23 D 3 12 GS Configuration (Top View) 3 WT6* 12 WT6 * = Device Code = Month (A~Z)
Datasheet
13
SSM2013

ETC
VOLTAGE CONTROLLED AMPLIFIER
Datasheet
14
APM2030N

Anpec Electronics Coropration
N-Channel MOSFET




• 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description 1 2 3 G D S Applications
• Power Management in Computer, Po
Datasheet
15
APM2054NU

Anpec Electronics Coropration
N-Channel MOSFET

• 20V/20A, RDS(ON)=35mΩ (typ.) @ VGS=10V RDS(ON)=45mΩ (typ.) @ VGS=4.5V RDS(ON)=110mΩ (typ.) @ VGS=2.5V Pin Description G D S


• Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 D Appli
Datasheet
16
APM2054N

Anpec Electronics Coropration
N-Channel MOSFET




• 20V/6A, RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252, SOT-89 and SOT-223 Packages Pin Description G G D S D S Top View of TO-252 Top View of SO
Datasheet
17
CEM2082

CET
Dual N-Channel Enhancement Mode Field Effect Transistor
20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acquired. Surface mount Package. 8 SO-8 1 1
Datasheet
18
COM20019

SMSC Corporation
Low Cost ARCNET (ANSI 878.1) Controller











• New Features Data Rates up to 312.5 Kbps Programmable Reconfiguration Times 24 Pin DIP, 28 Pin PLCC, 48 Pin TQFP Packages Ideal for Industrial/Factory/Building Automation and Transportation Applications Deterministic, (ANSI 878.
Datasheet
19
APTM20AM06S

Advanced Power Technology
MOSFET Power Module

· Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power conne
Datasheet
20
APTM20AM10ST

Advanced Power Technology
MOSFET Power Module

· Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
· Kelvin source for easy drive
· Very low stray inductance - Symmetrical design - Lead frames for power connections
· Inter
Datasheet



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