EIC discrete Semiconductors W0 Hoja de datos

No.	parte #	Fabricante	Descripción
1	W005	EIC discrete Semiconductors	SILICON BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.2
2	2W08	EIC discrete Semiconductors	SILICON BRIDGE RECTIFIERS : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) +
3	W02	EIC discrete Semiconductors	SILICON BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.2
4	W04	EIC discrete Semiconductors	SILICON BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.2
5	BZW04	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
6	A2W06G	EIC discrete Semiconductors	AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10
7	BZW04-10	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
8	A2W005G	EIC discrete Semiconductors	AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10
9	A2W01G	EIC discrete Semiconductors	AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10
10	A2W02G	EIC discrete Semiconductors	AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10
11	A2W08G	EIC discrete Semiconductors	AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10
12	BZW04P26	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
13	BZW04-102	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
14	BZW04-11	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
15	BZW04-15	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
16	BZW04-31	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
17	BZW04-40	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
18	BZW04-48	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
19	BZW04-64	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI
20	BZW04P111	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI