| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
|
EIC discrete Semiconductors |
ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR : * 1500W Peak Pulse Surge reverse capability on 10/1000µs waveform * Excellent clamping capability * Low incremental surge resistance * Fast response time : typically less than 5.0 ns from 0 volts to BV ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPR |
|
|
|
|
EIC discrete Semiconductors |
ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR : * 1500W Peak Pulse Surge reverse capability on 10/1000µs waveform * Excellent clamping capability * Low incremental surge resistance * Fast response time : typically less than 5.0 ns from 0 volts to BV ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPR |
|
|
|
|
EIC discrete Semiconductors |
ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR : * 1500W Peak Pulse Surge reverse capability on 10/1000µs waveform * Excellent clamping capability * Low incremental surge resistance * Fast response time : typically less than 5.0 ns from 0 volts to BV ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPR |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
|
|
|
|
EIC discrete Semiconductors |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10 |
|
|
|
|
EIC discrete Semiconductors |
ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR : * 1500W Peak Pulse Surge reverse capability on 10/1000µs waveform * Excellent clamping capability * Low incremental surge resistance * Fast response time : typically less than 5.0 ns from 0 volts to BV ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPR |
|
|
|
|
EIC discrete Semiconductors |
ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR : * 1500W Peak Pulse Surge reverse capability on 10/1000µs waveform * Excellent clamping capability * Low incremental surge resistance * Fast response time : typically less than 5.0 ns from 0 volts to BV ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPR |
|
|
|
|
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 |
|
|
|
|
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-0 rate flame r |
|
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
Desde 2024. D4U Semiconductor.
|