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EIC discrete Semiconductors |
FAST RECOVERY RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free RBV25 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) |
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EIC discrete Semiconductors |
SUPER FAST RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time SUPER FAST RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) |
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EIC discrete Semiconductors |
ULTRA FAST RECOVERY RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency ULTRA FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
HIGH EFFICIENT RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. |
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EIC discrete Semiconductors |
AVALANCHE BRIDGE RECTIFIERS : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board AVALANCHE BRIDGE RECTIFIERS BR10 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 ( |
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EIC discrete Semiconductors |
(D3SBAx0) SILICON BRIDGE RECTIFIER : * High current www.DataSheet4U.com * * * * * * * capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIF |
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EIC discrete Semiconductors |
HIGH EFFICIENT RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2400 VAC @1 Sec * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsin |
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EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength SILICON BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.4 |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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Desde 2024. D4U Semiconductor.
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