| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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EIC discrete Semiconductors |
ULTRA FAST RECOVERY RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency ULTRA FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. |
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EIC discrete Semiconductors |
SIDACs ange Storage Temperature Range SYMBOL VDRM VBO(Min.) VBO(Max.) IT(RMS) ITSM G105 G120 G130 G220 G240 G260 G270 ±90 95 113 ±90 110 125 ±90 120 135 ±180 205 230 1.0 20 ±180 220 250 ±180 240 270 ±180 250 280 UNIT V V V A A IDRM IHO IBO TJ TSTG 10 1 |
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EIC discrete Semiconductors |
ULTRA FAST RECOVERY RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency ULTRA FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. |
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Desde 2024. D4U Semiconductor.
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