No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
|
|
|
EIC discrete Semiconductors |
(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|
|
|
EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
|
|
|
EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
|
|
|
EIC discrete Semiconductors |
(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) |
|
|
|
EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
|
|
|
EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
|
|
|
EIC discrete Semiconductors |
(1N4460 - 1N4496) SILICON ZENER DIODES |
|
|
|
EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
|