| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
EIC |
SILICON EPITAXIAL SCHOTTKY BARRER DIODE : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) * Mounting Position : Any * Qualified Max Reflow Temperature : 260 °C Absolute Maximum Ratings (Ta = 25 °C) Parameter |
|
|
|
|
EIC |
SCHOTTKY BARRIER DIODE : • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance. • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g TH97/2478 TH09/2479 IATF 01 |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 100 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0. |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07 |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 30 V • Repetitive peak reverse voltage:max. 35 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07 |
|
|
|
|
EIC |
SILICON EPITAXIAL PLANAR DIODE : * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free SILICON EPITAXIAL PLANAR DIODE SOT-23 0.19 0.08 1.40 0.95 0.50 0.35 0.100 0.013 3.10 2.70 3 |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07 |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0.0 |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 55 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0.0 |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 3.5 ns • Continuous reverse voltage:max. 60 V • Peak reverse voltage:max. 70 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 HI |
|
|
|
|
EIC |
HIGH SPEED SWITCHING DIODE : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 ( |
|
Desde 2024. D4U Semiconductor.
|