| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: www.DataSheet4U.com The 2N2857 |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: www.DataSheet4U.com The 2N5031 |
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Powerex Power Semiconductors |
Single Discrete IGBT Low Drive Requirement Low VCE(sat) Molybdenum Mounting Plate . Preliminary Page 1 09/19/2006 QIS4506001 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272 www.pwrx.com Single Discrete IGBT 60 Amperes /4500 Volts Maximum Rati |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product • 1. Emitter 2. Base 3. Collector TO-39 DESCRIP |
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Huajing Discrete Devices |
Silicon N-Channel Power MOSFET l Fast Switching 500 20 230 0.25 l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron bal |
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ICONIC RF |
Discrete Power GaN HEMT • Frequency Range DC-14GHz • 51.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 71% • 18dB Linear Gain at 6GHz • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.82 x 4.56 x 0.10mm Applications • Aerospace |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS • Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% • 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTI |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 1 3 4 Power Gain, GPE = 19 dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72 D |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G * G Denotes RoHS Compliant |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc Characterized with S-Parameters 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIP |
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Huajing Discrete Devices |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc |
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ICONIC RF |
Discrete Power GaN HEMT • Frequency Range DC-14GHz • 48.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 72% • 17.8dB Linear Gain at 6GHz • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.824 x 2.495 x 0.10mm Applications • Aeros |
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ICONIC RF |
Discrete Power GaN HEMT • Frequency Range DC-12GHz • 41.5dBm Nominal P3dB • Maximum PAE at 6GHz of 65% • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.81 x 1.14 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless I |
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ICONIC RF |
Discrete Power GaN HEMT • Frequency Range DC-12GHz • 44.5dBm Nominal P3dB • Maximum PAE at 6GHz of 65% • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.81 x 1.68 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless I |
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ICONIC RF |
Discrete Power GaN HEMT • Frequency Range DC-14GHz • 45.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 70% • 18dB Linear Gain at 6GHz • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.824 x 1.44 x 0.10mm Applications • Aerospac |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF eq |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wide |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 1 3 4 Characterized with S-Parameters 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRI |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Application |
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Desde 2024. D4U Semiconductor.
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