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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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Diotec |
Silicon Power Z-Diodes d Characteristics Power dissipation Verlustleistung Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistanc |
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