Diotec Semiconductor BY1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BY134	Diotec Semiconductor	Silicon Rectifiers ion temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s – 50…+175/C – 50…+175/C 1 ) Valid, if leads are kept at ambient temp
2	BY164	Diotec Semiconductor	Silicon-Bridge Rectifiers mperatur Storage temperature – Lagerungstemperatur Tj TS – 50...+150°C – 50...+150°C 1 2 ) Valid for one branch – Gültig für einen Brückenzweig ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Ans
3	BY1600	Diotec Semiconductor	Silicon Rectifiers 50 A2s Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle R
4	BY16	Diotec Semiconductor	Silicon Rectifiers 50…+150/C – 50…+150/C < 25 K/W 1) Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistance junctio
5	BY179	Diotec Semiconductor	Silicon-Bridge Rectifiers mperatur Storage temperature – Lagerungstemperatur Tj TS – 50...+150°C – 50...+150°C 1 2 ) Valid for one branch – Gültig für einen Brückenzweig ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Ans
6	BY127	Diotec Semiconductor	Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at
7	BY135	Diotec Semiconductor	Silicon Rectifiers ion temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s – 50…+175/C – 50…+175/C 1 ) Valid, if leads are kept at ambient temp
8	BY1800	Diotec Semiconductor	Silicon Rectifiers 50 A2s Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle R
9	BY12	Diotec Semiconductor	High Voltage Si-Rectifiers
10	BY133	Diotec Semiconductor	Silicon Rectifiers ion temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s – 50…+175/C – 50…+175/C 1 ) Valid, if leads are kept at ambient temp