| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors 600 mA 800 mA 200 mA 150/C - 65…+ 150/C BSR 16 60 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 50 V IE = 0, - VCB = 50 V, Tj = 150/C IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C IC = |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors 0 mA 150/C - 65…+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 6 V IC = 10 mA, IB = 1 mA IC = |
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Desde 2024. D4U Semiconductor.
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