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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25°C) BCW29 BCW30 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältni |
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Diotec Semiconductor |
(BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors atur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Koll |
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Diotec Semiconductor |
(BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors atur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Koll |
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Diotec Semiconductor |
(BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors atur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Koll |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors = 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65…+ 150/C BCW 66 45 V 75 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors = 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65…+ 150/C BCW 66 45 V 75 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors = 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65…+ 150/C BCW 66 45 V 75 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors = 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65…+ 150/C BCW 66 45 V 75 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB |
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Diotec Semiconductor |
SMD General Purpose NPN Transistors General Purpose Low saturation voltage Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Weight approx. Case material Dimensions - Maße [mm] Solder & assembly conditions IC = 600 mA hFE ~ 160 Tjmax = 150°C VCEO = |
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Diotec Semiconductor |
(BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors atur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Koll |
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Desde 2024. D4U Semiconductor.
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