| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Diotec |
Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 5000 W (10/1000 µs waveform) Very fast response time Package smaller than industry standard Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 5 |
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Diotec |
Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 5000 W (10/1000 µs waveform) Very fast response time Package smaller than industry standard Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 5 |
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DIOTEC |
2 AMP FAST RECOVERY SILICON DIODES MECHANICAL SPECIFICATION PROPRIETARY SOFT GLASS R JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE ACTUAL SIZE OF DO-41 PACKAGE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typica |
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Diotec |
Silicon Rectifier Diodes 0 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50°C f > 15 Hz TA = 25°C TA = 25°C |
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Diotec |
Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 5000 W (10/1000 µs waveform) Very fast response time Package smaller than industry standard Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 5 |
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DIOTEC |
2 AMP FAST RECOVERY SILICON DIODES MECHANICAL SPECIFICATION PROPRIETARY SOFT GLASS R JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE ACTUAL SIZE OF DO-41 PACKAGE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typica |
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DIOTEC |
2 AMP FAST RECOVERY SILICON DIODES MECHANICAL SPECIFICATION PROPRIETARY SOFT GLASS R JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE ACTUAL SIZE OF DO-41 PACKAGE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typica |
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DIOTEC |
2 AMP FAST RECOVERY SILICON DIODES MECHANICAL SPECIFICATION PROPRIETARY SOFT GLASS R JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE ACTUAL SIZE OF DO-41 PACKAGE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typica |
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Diotec |
Silicon Rectifier Diodes 0 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50°C f > 15 Hz TA = 25°C TA = 25°C |
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Diotec |
Silicon Rectifier Diodes 0 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50°C f > 15 Hz TA = 25°C TA = 25°C |
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Diotec |
Silicon Rectifier Diodes 0 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50°C f > 15 Hz TA = 25°C TA = 25°C |
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Diotec |
Standard Recovery Rectifier Diodes Besonderheit Low thermal resistance Niedriger Wärmewiderstand High forward surge current Hohe Stoßstromfestigkeit Compliant to RoHS, REACH, Conflict Minerals 1) WEEE RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1) 62.5±0.5 Type 7.5±0. |
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Diotec |
Standard Recovery Rectifier Diodes Besonderheit Low thermal resistance Niedriger Wärmewiderstand High forward surge current Hohe Stoßstromfestigkeit Compliant to RoHS, REACH, Conflict Minerals 1) WEEE RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1) 62.5±0.5 Type 7.5±0. |
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Diotec |
Standard Recovery Rectifier Diodes Besonderheit Low thermal resistance Niedriger Wärmewiderstand High forward surge current Hohe Stoßstromfestigkeit Compliant to RoHS, REACH, Conflict Minerals 1) WEEE RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1) 62.5±0.5 Type 7.5±0. |
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Diotec Semiconductor |
Silicon-Twin Diodes Center tap für eine 50 Hz Sinus-Halbwelle IFAV IFAV IFAV IFAV IFSM 1.0 A 1) 2.0 A 1) 1.0 A 1) 2.0 A 1) 10 A TU = 25/C TA = 25/C 1 ) Leads kept at ambient temperature at a distance of 3 mm from case Anschlußdrähte in 3 mm Abstand von Gehäuse auf Umgebungs |
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Diotec |
Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 5000 W (10/1000 µs waveform) Very fast response time Package smaller than industry standard Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 5 |
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DIOTEC |
2 AMP FAST RECOVERY SILICON DIODES MECHANICAL SPECIFICATION PROPRIETARY SOFT GLASS R JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE ACTUAL SIZE OF DO-41 PACKAGE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typica |
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Diotec |
Silicon Rectifier Diodes 0 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50°C f > 15 Hz TA = 25°C TA = 25°C |
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Diotec |
Silicon Rectifier Diodes 0 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50°C f > 15 Hz TA = 25°C TA = 25°C |
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Diotec |
Silicon Rectifier Diodes 0 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50°C f > 15 Hz TA = 25°C TA = 25°C |
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Desde 2024. D4U Semiconductor.
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