| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Diotec |
Surface mount Schottky-Barrier Diodes hlaßspannung 2) IF = 20 mA IF = 200 mA Leakage current – Sperrstrom 2) VR = 10 V VR = 20 V VR = 30 V MCL103C MCL103B MCL103A IR IR IR – – – VF VF – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 0.37 V 0.6 V 5 :A 5 :A 5 :A 1 ) Mounted on P.C. board w |
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Diotec |
Surface mount Schottky-Barrier Diodes hlaßspannung 2) IF = 20 mA IF = 200 mA Leakage current – Sperrstrom 2) VR = 10 V VR = 20 V VR = 30 V MCL103C MCL103B MCL103A IR IR IR – – – VF VF – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 0.37 V 0.6 V 5 :A 5 :A 5 :A 1 ) Mounted on P.C. board w |
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Diotec |
Surface mount Small Signal Diodes IFRM 300 mA 1) IFSM 500 mA 1) IFSM 2 A VR 75 V VRRM 100 V Tj -55...+175°C TS -55…+175°C Characteristics (Tj = 25°C) Forward voltage Durchlass-Spannung MCL4148 MCL4448 Leakage current – Sperrstrom 2) Leakage current – Sperrstrom, Tj = 125°C 2) |
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Diotec |
Surface mount Small Signal Diodes IFRM 300 mA 1) IFSM 500 mA 1) IFSM 2 A VR 75 V VRRM 100 V Tj -55...+175°C TS -55…+175°C Characteristics (Tj = 25°C) Forward voltage Durchlass-Spannung MCL4148 MCL4448 Leakage current – Sperrstrom 2) Leakage current – Sperrstrom, Tj = 125°C 2) |
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Diotec |
Surface mount Schottky-Barrier Diodes hlaßspannung 2) IF = 20 mA IF = 200 mA Leakage current – Sperrstrom 2) VR = 10 V VR = 20 V VR = 30 V MCL103C MCL103B MCL103A IR IR IR – – – VF VF – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 0.37 V 0.6 V 5 :A 5 :A 5 :A 1 ) Mounted on P.C. board w |
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Diotec |
Surface mount Schottky-Barrier Diodes hlaßspannung 2) IF = 20 mA IF = 200 mA Leakage current – Sperrstrom 2) VR = 10 V VR = 20 V VR = 30 V MCL103C MCL103B MCL103A IR IR IR – – – VF VF – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 0.37 V 0.6 V 5 :A 5 :A 5 :A 1 ) Mounted on P.C. board w |
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Diotec Semiconductor |
Surface Mount Small Signal Diodes 40 V – 200 nA < 0.39 V < 0.9 V 400 mW ) 2A < 2.2 pF < 1 ns -55...+200°C -55…+200°C < 300 K/W 1) Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz Reverse recovery time – Sperrverzug IF = 5 mA über/through IR = 5 mA bis/to |
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Diotec Semiconductor |
Surface Mount Small Signal Diodes 40 V – 200 nA < 0.39 V < 0.9 V 400 mW ) 2A < 2.2 pF < 1 ns -55...+200°C -55…+200°C < 300 K/W 1) Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz Reverse recovery time – Sperrverzug IF = 5 mA über/through IR = 5 mA bis/to |
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Desde 2024. D4U Semiconductor.
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