No. | parte # | Fabricante | Descripción | Hoja de Datos |
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DIODES |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET and Benefits • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufa |
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Diodes |
N-Channel MOSFET and Benefits 240 Volt BVDS Extremely Low RDS(ON)=4.3Ω Low Threshold and Fast Switching Lead-Free Finish; RoHS Compliant (Notes 1& 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability |
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Diodes |
N-Channel MOSFET BVDSS > 240V RDS(ON) ≤ 6Ω @ VGS = 2.5V ID = 260mA Maximum Continuous Drain Current Fast Switching Speed Low Threshold Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q |
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DIODES |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET and Benefits • Low Input Capacitance • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e. parts |
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Diodes |
100V N-CHANNEL MOSFET and Benefits • BVDSS > 100V • RDS(ON) ≤ 0.54Ω @ VGS = 10V • Maximum Continuous Drain Current ID = 1.67A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring spec |
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Diodes |
250V N-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • High Voltage • Low On-Resistance • Fast Switching Speed • Low Threshold • Low Gate Drive • Complementary P-Channel Type ZVP4525E6 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Not |
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Diodes |
60V N-Channel MOSFET and Benefits • V(BR)DSS > 60V • RDS(ON) ≤ 0.33Ω @ VGS = 10V • Maximum Continuous Drain Current ID = 2.1A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High |
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Diodes |
60V N-Channel MOSFET and Benefits • Breakdown Voltage BVDSS > 60V • RDS(on) ≤ 0.33Ω @ VGS = 10V • Maximum continuous drain current ID = 1.1A • “Green” component, Lead Free Finish / RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Applicatio |
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Diodes |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Diodes |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106G D S COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP2106G ZVN2106 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissi |
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Diodes |
200V N-CHANNEL ENHANCEMENT MODE MOSFET a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Off-line Power Supply Start-up Circuitry Features and Benefits High Voltage Low |
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Diodes |
250V N-Channel MOSFET and Benefits • High Voltage • Low On-Resistance • Fast Switching Speed • Low Gate Drive • Low Threshold • Complementary P-Channel Type ZVP4525G • SOT223 Package • Lead-Free Finish; RoHS Compliant (Notes 1& 2) • Halogen and Antimony Free. “Green” Devi |
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Diodes |
N-Channel MOSFET Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: SOT89 Case Material: Molded Plastic, “Green” M |
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Diodes |
N-Channel MOSFET and Benefits BVDSS=60V RDS(ON) = 0.33Ω Repetitive Avalanche Rating Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications DC-DC |
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Diodes |
N-Channel MOSFET and Benefits Compact Geometry Fast Switching Speeds No Secondary Breakdown and Excellent Temperature Stability High Input Impedance and Low Current Drive Ease of Paralleling Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Ant |
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Diodes |
60V N-Channel MOSFET • BVDSS > 60V • RDS(on) ≤ 2.5Ω @ VGS = 10V • Maximum continuous drain current ID = 200mA • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil |
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Diodes |
N-Channel MOSFET and Benefits • High pulse current handling in linear mode • Low input capacitance • Fast switching speed • Lead Free By Design/RoHS Compliant (Note 1) Mechanical Data • Case: SOT-23 • Case Material: UL Flammability Classification Rating 94V-0 • Moist |
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