| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Diodes Incorporated |
100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipm |
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Sanken Electric |
(CTB-24 / CTB-34) Schottky Barrier Diodes 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 Peak Forward Surge Current 0 10 20 30 40 50 60 0 1 5 10 50 Case Temperature Tc (°C) Forward Voltage VF (V) Reverse Voltage VR (V) Overcurrent Cycles CTB-24L 10 Tc—IF(AV) Derating t /T = 1/2 |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipm |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Sanken Electric |
(CTB-24 / CTB-34) Schottky Barrier Diodes 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 Peak Forward Surge Current 0 10 20 30 40 50 60 0 1 5 10 50 Case Temperature Tc (°C) Forward Voltage VF (V) Reverse Voltage VR (V) Overcurrent Cycles CTB-24L 10 Tc—IF(AV) Derating t /T = 1/2 |
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Diodes |
50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR • 50A Peak Pulse Current @ 10/1000μs • 250A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State impedance and Low On-State Voltage • Helps Equipme |
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Diodes |
50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR • 50A Peak Pulse Current @ 10/1000μs • 250A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State impedance and Low On-State Voltage • Helps Equipme |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Desde 2024. D4U Semiconductor.
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