Diodes SK3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	DMP4011SK3Q	DIODES	P-CHANNEL MOSFET and Benefits BVDSS -40V RDS(ON) MAX 11m @ VGS = -10V 19m @ VGS = -4.5V ID TC = +25°C -74A -55A Description This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP a
2	DMP4011SK3	DIODES	P-CHANNEL MOSFET and Benefits BVDSS -40V RDS(ON) MAX 11m @ VGS = -10V 19m @ VGS = -4.5V ID TC = +25°C -74A -55A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, mak
3	SK34	Diotec	SMD Schottky Barrier Rectifier Diodes Low forward voltage drop High average forward current Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) 5.8±0.2 Taped and reeled 7.2±0.5 Weight approx. Dimensions - Maße [mm] Case material Solder & assembly conditions IFAV = 3.
4	DMPH4023SK3	DIODES	40V P-CHANNEL MOSFET BVDSS -40V RDS(ON) max 26mΩ @ VGS = -10V ID max TC = +25°C -50A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficienc
5	SK310	Kexin	Schottky Diodes ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ● High Temp Soldering: 250°C for 10 Seconds At Terminals ● High Current Capability With Low Forward Voltage DO-214AB(SMC) 3.250 2.743 2 7.112 6.604 6.223 3.
6	SK33	Diodes	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER · Guard Ring Construction for Transient Protection · High Current Capability and Low VF · Capable of Meeting Environmental Standards of MIL-STD-19500 · Plastic Material - UL Flammability Classification 94V-0 Mechanical Data · Case: SMC, Molded Plasti
7	SK38	SEMIKRON	Schottky barrier rectifiers diodes !"#$ Mechanical Data % & '($)"*+ , - .) / 0 1$%/'$23 - 4 % 5- -
8	SK35	Diotec	SMD Schottky Barrier Rectifier Diodes Low forward voltage drop High average forward current Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) 5.8±0.2 Taped and reeled 7.2±0.5 Weight approx. Dimensions - Maße [mm] Case material Solder & assembly conditions IFAV = 3.
9	DMP10H400SK3	Diodes	P-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: TO252 (DPAK)  Ca
10	DMNH4006SK3	Diodes	N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  An Automotive-Compliant Part is Available Under
11	DMNH4011SK3	Diodes	N-Channel MOSFET and Benefits  Rated to +175C – ideal for high ambient temperature environments  Low On-Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101
12	SK33SMB	Diotec	SMD Schottky Barrier Rectifier Diodes Low forward voltage drop High average forward current Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) 3.7± 0.3 Taped and reeled 4.6± 0.5 Weight approx. Case material Dimensions - Maße [mm] Solder & assembly conditions IFAV =
13	DMPH4023SK3Q	DIODES	40V P-CHANNEL MOSFET  Rated to +175°C—Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Fast Switching Speed  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halo
14	DMPH4011SK3Q	DIODES	40V P-CHANNEL MOSFET and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Anti
15	DMPH4015SK3	Diodes	P-Channel MOSFET and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-resistance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Anti
16	DMPH4015SK3Q	Diodes	P-Channel MOSFET and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Anti
17	DMP4015SK3	Diodes	P-Channel MOSFET and Benefits  100% Unclamped Inductive Switch (UIS) test in production  Low On-Resistance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  This part is qualified to JEDEC
18	SK315	Diotec Semiconductor	SMD Schottky Barrier Rectifier Diodes Low forward voltage drop High average forward current Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) 5.8±0.2 Taped and reeled 7.2±0.5 Weight approx. Dimensions - Maße [mm] Case material Solder & assembly conditions IFAV = 3.
19	DMNH4006SK3Q	Diodes	N-Channel MOSFET  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low Qg – Minimizes Switching Loss  Low RDS(ON) – Minimizes On State Loss  Lead-Free Finish
20	SK38	Diotec	SMD Schottky Barrier Rectifier Diodes Low forward voltage drop High average forward current Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) 5.8±0.2 Taped and reeled 7.2±0.5 Weight approx. Dimensions - Maße [mm] Case material Solder & assembly conditions IFAV = 3.