| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
ON Semiconductor |
ESD Protection Diodes • Low Capacitance (5.5 pF Max, I/O to GND) • Small Body Outline Dimensions ♦ 0.6 x 0.3 mm • Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) • Low ESD Clamping Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
|
|
|
|
Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0. |
|
|
|
|
Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0. |
|
|
|
|
Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0. |
|
|
|
|
Diodes |
0.2A SCHOTTKY BARRIER DIODE CHIP SCALE PACKAGE and Benefits 0.18mm footprint – 70% smaller than DFN1006/SOD923 Off board profile of 0.3mm – more than 30% thinner than the DFN1006 Low forward voltage of 0.50V (max) – minimises power dissipation losses Low leakage – maximises battery |
|
|
|
|
Diodes |
SCHOTTKY BARRIER RECTIFER and Benefits Off Board Profile of 0.275mm – More than 30% Thinner than DFN1006 Low Forward Voltage (VF) Minimizes Conduction Losses and Improves Efficiency Reduced High Temperature Reverse Leakage; Increased Reliability Against Thermal Runaway |
|
|
|
|
ON Semiconductor |
3.3V ESD Protection Diodes • Low Capacitance (4 pF, I/O to GND) • Small Body Outline Dimensions ♦ 01005 Size: 0.445 x 0.240 mm • Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) • Low ESD Clamping Voltage • These Devices are Pb−Free, Halogen Free/BFR Free an |
|
|
|
|
Diodes |
SCHOTTKY and Benefits Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Interlocking Clip Design for High Surge Current Capacity Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Dev |
|
|
|
|
Diodes |
1.0A SURFACE MOUNT SCHOTTKY and Benefits Reduced ultra-low forward voltage drop (VF). Better efficiency and cooler operation. Reduced high temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation Totally Lead-Free & |
|
|
|
|
Diodes |
ULTRA-SMALL SURFACE MOUNT SCHOTTKY DIODE and Benefits Ultra-Small Leadless Surface Mount Package (0.6mm x 0.3mm) Very Low Reverse Leakage Current Low Forward Voltage Fast Reverse Recovery Low Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimo |
|
|
|
|
Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance H G A B D SOD-323 Dim A J Min 2.30 1.60 1.20 0.25 0.20 0.10 0° Max 2.70 1.80 1.40 0.35 0.40 0.15 8° Mechanic |
|
|
|
|
Diodes Incorporated |
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) An Automotive-Compliant Part is Avai |
|
|
|
|
Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE and Benefits Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Devic |
|
|
|
|
Diodes |
SCHOTTKY BARRIER RECTIFER and Benefits Low forward voltage (VF) minimizes conduction losses and improves efficiency. Reduced high-temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation. Totally Lead-Free & Fully |
|
|
|
|
Diodes |
SCHOTTKY BARRIER DIODE and Benefits 0.18mm2 Footprint, Off Board Profile of 0.28mm Low Forward Voltage of 0.50V (Max) – Minimizes Power Dissipation Losses Low Leakage – Maximizes Battery Power Soft, Fast Switching Capability Totally Lead-Free & Fully RoHS Complia |
|
|
|
|
ON Semiconductor |
ESD Protection Diodes • Low Capacitance (5.5 pF Typ, I/O to GND) • Small Body Outline Dimensions: − 01005 Size: 0.435 x 0.230 mm • Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) • Low ESD Clamping Voltage • These Devices are Pb−Free, Halogen Free/BFR |
|
|
|
|
DIODES |
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE and Benefits Very Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 S |
|
|
|
|
DIODES |
SURFACE-MOUNT SCHOTTKY BARRIER DIODE Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance Ultra-Small Surface-Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti |
|
|
|
|
Diodes |
SCHOTTKY and Benefits Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Interlocking Clip Design for High Surge Current Capacity Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Dev |
|
|
|
|
Diodes |
SURFACE MOUNT SCHOTTKY BARRIER DIODE and Benefits Low-Forward Voltage Drop Guard Ring Construction for Transient Protection Low Capacitance Ultra-Small Surface-Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Not |
|
Desde 2024. D4U Semiconductor.
|