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Diodes P4S DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
P4SMA160CA

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
2
P4SMA350CA

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
3
P4SMA200A

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
4
P4SMA51CA

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
5
P4SMA51A

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
6
P4SMA33CA

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
7
P4SMAJ22

Diotec Semiconductor
SMD Transient Voltage Suppressor Diodes
Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth
Datasheet
8
P4SMA82A

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
9
P4SMA400

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
10
P4SMA510CA

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
11
P4SMAJ11C

Diotec Semiconductor
SMD Transient Voltage Suppressor Diodes
Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth
Datasheet
12
P4SMA480A

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
13
P4SMA15A

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
14
P4SMA11A

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
15
P4SMA200CA

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
16
P4SMA10C

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
17
P4SMA9.1CA

JGD
Surface Mount Transient Voltage Suppressors Diodes
* For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi
Datasheet
18
P4SMA130CA

Littelfuse
Transient Voltage Suppression Diodes

■ 400W peak pulse power
■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01%
■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature
■ Excellent clamping capability Coefficient, typical v
Datasheet
19
P4SMAJ5.0CA

Diotec Semiconductor
SMD Transient Voltage Suppressor Diodes
Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth
Datasheet
20
P4SMAJ13C

Diotec Semiconductor
SMD Transient Voltage Suppressor Diodes
Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth
Datasheet



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