No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
Diotec Semiconductor |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
Diotec Semiconductor |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Glass passivated junction * Excellent clamping capability * Fast response time: typically less than 1.0ps from 0 volts to BV min * Typical IR less than 1μA above 10V * High temperature solderi |
|
|
|
Littelfuse |
Transient Voltage Suppression Diodes ■ 400W peak pulse power ■ 260oC/40sec change to capability at 10/1000µs 260oC/30sec waveform, repetition rate (duty cycles):0.01% ■ VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature ■ Excellent clamping capability Coefficient, typical v |
|
|
|
Diotec Semiconductor |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|
|
|
Diotec Semiconductor |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|