Diodes LM3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	LM358	Diodes	LOW POWER DUAL OPERATIONAL AMPLIFIER • Internally frequency compensated for unity gain • Large dc voltage gain: 100 dB • Very low supply current drain (500μA); essentially independent of supply voltage • Wide bandwidth (unity gain): 1MHz (temperature compensated) • Input common-mode vol
2	LM385B	ON Semiconductor	Micropower Voltage Reference Diodes • Operating Current from 10 mA to 20 mA • 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades • Low Temperature Coefficient • 1.0 W Dynamic Impedance • Surface Mount Package Available • These Devices are Pb−Free and are RoHS Compliant Cathode 10 k 360
3	LM385B	Motorola	MICROPOWER VOLTAGE REFERENCE DIODES exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on –chip trimming. The large dynamic operating range enables these devices to be used in applications with widely v
4	LM358S	Diodes	LOW POWER DUAL OPERATIONAL AMPLIFIER • Internally frequency compensated for unity gain • Large dc voltage gain: 100 dB • Very low supply current drain (500μA); essentially independent of supply voltage • Wide bandwidth (unity gain): 1MHz (temperature compensated) • Input common-mode vol
5	LM358S-13	Diodes	LOW POWER DUAL OPERATIONAL AMPLIFIER • Internally frequency compensated for unity gain • Large dc voltage gain: 100 dB • Very low supply current drain (500μA); essentially independent of supply voltage • Wide bandwidth (unity gain): 1MHz (temperature compensated) • Input common-mode vol
6	LM30KBV60FR	Shindengen	Bridge Diodes ・Small･Compact SIP ・Low VF ・Halogen free ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): D6K Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Rep
7	LM385	Motorola	MICROPOWER VOLTAGE REFERENCE DIODES exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on –chip trimming. The large dynamic operating range enables these devices to be used in applications with widely v