Diodes Incorporated DMN Hoja de datos

No.	parte #	Fabricante	Descripción
1	DMN2004K	Diodes Incorporated	N-CHANNEL ENHANCEMENT MODE MOSFET
2	DMN601WK	Diodes Incorporated	N-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free
3	DMN2004VK	Diodes Incorporated	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface-Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and An
4	DMN601K	Diodes Incorporated	N-Channel MOSFET and Benefits • Low On-Resistance: RDS(on) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony
5	DMN601VK	Diodes Incorporated	N-Channel MOSFET • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up
6	DMN601TK	Diodes Incorporated	N-Channel MOSFET NEW PRODUCT • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) K TO
7	DMN100	Diodes Incorporated	N-Channel MOSFET · · · · · · · Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards
8	DMN2114SN	Diodes Incorporated	N-Channel Transistor • • • • • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (No
9	DMN2004WK	Diodes Incorporated	N-Channel MOSFET • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green
10	DMN2005LPK	Diodes Incorporated	N-Channel Transistor · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate UNDER DEVELOPMENT DFN
11	DMN2005K	Diodes Incorporated	N-Channel Transistor  Low On-Resistance  Very Low Gate Threshold Voltage, 0.9V Max.  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Devic
12	DMN5L06W	Diodes Incorporated	N-Channel Transistor · · · · · · · · · N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Not
13	DMN5L06K	Diodes Incorporated	N-Channel MOSFET NEW PRODUCT · · · · · · · · · Low On-Resistance: RDS(ON) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4
14	DMN600V	Diodes Incorporated	N-Channel MOSFET · · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 3) D G B C A SOT-563 Di
15	DMN601DWK	Diodes Incorporated	N-Channel MOSFET • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up
16	DMN601DMK	Diodes Incorporated	N-Channel MOSFET and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “G
17	DMN2112SN	Diodes Incorporated	N-Channel FET  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/
18	DMN2005LP4K	Diodes Incorporated	N-Channel Transistor • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Ultr
19	DMN5L06VAK	Diodes Incorporated	DUAL N-CHANNEL TRANSISTOR  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1
20	DMN5L06VK	Diodes Incorporated	DUAL N-CHANNEL TRANSISTOR  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1