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Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER and Benefits IR Max (mA) 0.5 IR Max (mA) 0.5 IR Max (mA) 0.5 IR Max (mA) 0.5 Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency For Use in Low Voltage Drop, High Freque |
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Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER and Benefits IR Max (mA) 0.5 IR Max (mA) 0.5 IR Max (mA) 0.5 IR Max (mA) 0.5 Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency For Use in Low Voltage Drop, High Freque |
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Diodes Incorporated |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automated Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 50A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Prote |
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Diodes Incorporated |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 25A Peak For Use in Low Voltage, High Frequency Inverters, Free |
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Diodes Incorporated |
(DDTBxxxC) PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2 Lead Free/RoHS Compliant (Note 2) TOP VIEW SOT-23 Dim A Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.0 |
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Diodes Incorporated |
100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipm |
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Diodes Incorporated |
(TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT NEW PRODUCT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and L |
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Diodes Incorporated |
(DDTBxxxC) PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2 Lead Free/RoHS Compliant (Note 2) TOP VIEW SOT-23 Dim A Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.0 |
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Diodes Incorporated |
(DDTBxxxC) PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2 Lead Free/RoHS Compliant (Note 2) TOP VIEW SOT-23 Dim A Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.0 |
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Diodes Incorporated |
(DDTBxxxC) PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2 Lead Free/RoHS Compliant (Note 2) TOP VIEW SOT-23 Dim A Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.0 |
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Diodes Incorporated |
(DDTBxxxC) PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2 Lead Free/RoHS Compliant (Note 2) TOP VIEW SOT-23 Dim A Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.0 |
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Desde 2024. D4U Semiconductor.
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