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Diodes |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR • BVCEO > 40V • IC = 1A high Continuous Current • Low saturation voltage VCE(sat) < 500mV @ 1A • Complementary PNP type: FCX591A • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified |
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Diodes |
NPN HIGH VOLTAGE TRANSISTOR BVCEO > 400V IC = 225mA Continuous Collector Current ICM = 500mA Peak Pulse Current Excellent hFE Characteristics up to 100mA Low saturation voltage VCE(sat) < 200mV @ 20mA Complementary PNP Type: FCX558 Totally Lead-Free & Fully RoHS C |
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Diodes |
50V NPN LOW SATURATION POWER TRANSISTOR BVCEO > 50V IC = 3A High Continuous Collector Current ICM up to 6A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < 220mV @ 1A RCE(sat) = 87mΩ @ 2.75A for a Low Equivalent On-Resistance hFE Characterized up to 6 |
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Diodes |
PNP SILICON POWER TRANSISTOR • BVCEO = -12V • IC = -3.0A Continuous Current • Low Saturation Voltage VCE(sat) < -20mV @ -100mA • Rsat = 77mΩ for a Low Equivalent On-Resistance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (N |
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Diodes |
60V PNP MEDIUM POWER TRANSISTOR • BVCEO > -60V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • RCE(SAT) = 295mΩ for a Low Equivalent On-Resistance • hFE characterized up to 2A for high current gain hold up • Complementary NPN type: FCX491 • Totally |
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Diodes |
TRANSISTOR • BVCEO > -40V • IC = -2A Continuous Current • ICM = -6A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -250mV @ -500mA • PD = 2W Power Dissipation • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” |
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Diodes |
100V NPN MEDIUM POWER TRANSISTOR • BVCEO > 100V • IC = 1A High Continuous Current • Low Saturation Voltage VCE(sat) < 300mV @ 250mA • Complementary PNP Type: FCX593 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • An aut |
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Diodes |
150V NPN HIGH-VOLTAGE TRANSISTOR • BVCEO > 150V • IC = 1A High Continuous Current • Low Saturation Voltage VCE(sat) < 300mV @ 0.5A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • An automotive-compliant part is availabl |
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Diodes |
PNP HIGH VOLTAGE SWITCHING TRANSISTOR • BVCEO > -150V • BVCEV > -180V • IC = -700mA high Continuous Collector Current • Low saturation voltage VCE(sat) < -300mV @ -100mA • Complementary NPN type: FCX495 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” |
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Diodes |
PNP HIGH VOLTAGE TRANSISTOR BVCEO > -400V IC = -200mA High Continuous Current ICM = -500mA Peak Pulse Current Excellent hFE Characteristics up to -100mA Low Saturation Voltage VCE(sat) < -200mV @ -20mA Complementary NPN Type: FCX458 Totally Lead-Free & Fully RoHS |
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Diodes |
40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR • BVCEO > -40V • Maximum Continuous Current IC = -1A • Low saturation voltage VCE(sat) < -500mV @ -1A • Complementary NPN type: FCX491A • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu |
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Diodes |
25V PNP MEDIUM POWER TRANSISTOR • BVCEO > -25V • IC = -3A high Continuous Current • ICM = -8A Peak Pulse Current • Low saturation voltage VCE(sat) < -320mV @ -3A • hFE specified up to -8A for high current gain hold up • Complementary NPN Type: FCX688B • Lead-Free Finish; RoHS Compl |
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Diodes |
45V NPN HIGH GAIN POWER TRANSISTOR BVCEO > 45V IC = 2A high Continuous Collector Current ICM up to 6A Peak Pulse Current High gain hFE > 400 @ 1A 2W Power Dissipation Low saturation voltage VCE(sat) < 300mV @ 1A Complementary PNP type: FCX790A Lead-Free Finish; RoHS Co |
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Diodes |
120V NPN HIGH VOLTAGE DARLINGTON TRANSISTOR BVCEO > 120V Low Saturation Voltage < 1.5V @ 1A Darlington Transistor hFE > 2k @ 1A IC = 1A High Continuous Collector Current Specification is Also Available in Eline and SOT223 Package Outlines Lead-Free Finish; RoHS Compliant (Notes 1 & |
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Diodes |
10V NPN MEDIUM POWER TRANSISTOR • BVCEO > 10V • IC = 4A High Continuous Current • ICM = 20A Peak Pulse Current • High Gain Holds up hFE > 300 @ IC=1A • Low Equivalent On-Resistance; RCE(sat) = 40mΩ at 4A • Excellent hFE Characteristics up to 20A • Lead-Free Finish; RoHS Compliant ( |
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Diodes |
-40V PNP POWER TRANSISTOR BVCEO > -40V IC = -3A High Continuous Current ICM = -5A Peak Pulse Current Very Low VCE(sat) < -220mV at -1A RCE(sat) = 66mΩ at -3A PD = 2W Complimentary Part – FCX1051A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Ant |
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Diodes |
NPN MEDIUM POWER TRANSISTOR BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 195mΩ for a Low Equivalent On-Resistance hFE Characterized up to 2A for High Current Gain Hold-Up Complementary PNP Type: FCX591 Totally Lead-Free & |
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Diodes |
NPN MEDIUM POWER HIGH GAIN TRANSISTOR • BVCEO > 60V • IC = 1A high Continuous Collector Current • ICM = 2A Peak Pulse Current • High Gain device > 500 at IC =150mA • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to |
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Diodes |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BVCEO > -40V Maximum Continuous Current IC = -1A Low Saturation Voltage VCE(SAT) < -500mV @ -1A Complementary NPN type: FCX491AQ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Q |
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Diodes |
120V PNP DARLINGTON TRANSISTOR BVCEO > -120V Darlington Transistor hFE > 3k @ -1A Low Saturation Voltage < -1.3V @ -1A IC = -1A Continuous Collector Current Specification is also available in Eline and SOT223 package outlines Lead-Free Finish; RoHS Compliant (Notes 1 & |
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Desde 2024. D4U Semiconductor.
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