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Diodes |
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr |
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Diodes |
N-CHANNEL ENHANCEMENT MODE MOSFET • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Low VSD - reducing the losses due to body diode conduction • Low Qrr - lower Qrr |
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Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE MOSFET • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Low VSD - reducing the losses due to body diode conduction • Low Qrr - lower Qrr |
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Diodes |
P-Channel MOSFET and Benefits • MOSFET with Low RDS(ON) – minimize conduction losses • Low Gate Threshold Voltage, -1.3V Max • Schottky Diode with Low Forward Voltage Drop • Low Profile, 0.5mm Max Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halo |
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Diodes |
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr |
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Diodes |
P-CHANNEL ENHANCEMENT MODE MOSFET • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 150mΩ (typ) @VGS = -1.8V • Low Gate Threshold Voltage, -1.3V Max • Fast Switching Speed • Low Input/Output Leakage • Incorporates Low VF Super Barrier Rectifier (SBR) • Low Profile, 0.5mm |
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Diodes |
P-Channel MOSFET Low On-Resistance 95m @VGS = -4.5V 120m @VGS = -2.5V 86m (Typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR®) Low Profile, 0.5mm |
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Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE MOSFET • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Low VSD - reducing the losses due to body diode conduction • Low Qrr - lower Qrr |
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Diodes Incorporated |
30V N-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) – minimize conduction losses • Low VSD – reducing the losses due to body diode conduction • Low Qrr |
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Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) – minimize conduction losses • Low VSD – reducing the losses due to body diode conduction • Low Qrr |
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Diodes |
P-Channel MOSFET and Benefits Low Input Capacitance MOSFET with Low RDS(ON) – Minimize Conduction Losses Schottky Diode with Low Forward Voltage Drop Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “G |
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Diodes |
N-Channel MOSFET • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: Low RDS(ON) – minimize conduction losses Low VSD – reducing the losses due to body diode conduction Low Qrr – lower Qrr |
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Diodes |
N-Channel MOSFET • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Ultra Low VSD – enhanced to reduce losses due to body diode conduction • Low Qrr |
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Desde 2024. D4U Semiconductor.
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