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DIODES |
ULTRA-LOW CAPACITANCE BIDIRECTIONAL TVS DIODE • Ultra-Small, Low Profile Leadless Surface-Mount Package (0.6mm × 0.3mm × 0.3mm) • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±15kV, Contact ±14kV • 1 Channel of ESD Protection • Ultra-Low Channel Input Capacitance • Totally Lead-Free & |
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Diodes |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Ultra-Small, Low Profile Leadless Surface Mount Package (0.6 x 0.3 x 0.3mm) Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±25kV 1 Channel of ESD Protection Low Channel Input Capacitance Typically Used in Cellula |
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JGD |
Silicon Epitaxial Planar Zener Diodes ZPD1 THRU ZPD75 Silicon Epitaxial Planar Zener Diodes ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.154 --- 3.90 C --- 0.020 --- 0.50 D --- 0.07 |
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SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
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JGD |
Silicon Epitaxial Planar Zener Diodes ZPD2V7B THRU ZPD75B Silicon Epitaxial Planar Zener Diodes ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.154 --- 3.90 C --- 0.020 --- 0.50 D --- |
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Diodes |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Provides ESD Protection per IEC 61000-4-2 Standard: Air ±8kV,Contact ±8kV 1 Channel of ESD Protection Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Me |
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Diodes |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODES Low Profile Package (0.53mm max) and Ultra-Small PCB Footprint Area (1.08 * 0.68mm max) Suitable for Compact Portable Electronics Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±25kV 1 Channel of ESD Protection Low Cha |
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NXP |
(PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE s s s s s s s Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC |
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JGD |
Silicon Epitaxial Planar Zener Diodes ZPD1 THRU ZPD75 Silicon Epitaxial Planar Zener Diodes ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.154 --- 3.90 C --- 0.020 --- 0.50 D --- 0.07 |
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SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
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NXP |
Ultra low capacitance unidirectional ESD protection diodes I Unidirectional ESD protection of one line I ESD protection up to 9 kV I Ultra low diode capacitance: Cd = 2.6 pF I IEC 61000-4-2; level 4 (ESD) I Very low leakage current: IRM = 1 nA I AEC-Q101 qualified 1.3 Applications I USB interfaces I 10/100/ |
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SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
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SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
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SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
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JGD |
Silicon Epitaxial Planar Zener Diodes ZPD2V7B THRU ZPD75B Silicon Epitaxial Planar Zener Diodes ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.154 --- 3.90 C --- 0.020 --- 0.50 D --- |
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Diodes |
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Clamping Voltage: 9.4V at 16A TLP IEC 61000-4-2 (ESD): Air — ±12kV, Contact — ±12kV IEC 61000-4-5 (Lightning): 4.0A (8/20µs) 4 Channels of ESD Protection Ultra-Low Channel Input Capacitance of 0.35pF Max TLP Dynamic Resistance: 0.39Ω To |
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NXP |
Low capacitance bidirectional ESD protection diodes I Bidirectional ESD protection of one line I ESD protection > 23 kV I Max. peak pulse power: Ppp = 500 W I IEC 61000-4-2, level 4 (ESD) I Low clamping voltage: V(CL)R = 26 V I IEC 61000-4-5 (surge); Ipp = 18 A I Ultra low leakage current: IRM < 0.09 |
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NXP |
Low Capacitance Unidirectional ESD Protection Diodes I Unidirectional ESD protection of one line I Low diode capacitance: Cd = 34 pF I Low clamping voltage: VCL = 11 V I Very low leakage current: IRM = 100 nA I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I AEC-Q101 qualified 1.3 Applicati |
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NXP |
Low Capacitance Unidirectional ESD Protection Diodes I Unidirectional ESD protection of one line I Low diode capacitance: Cd = 34 pF I Low clamping voltage: VCL = 11 V I Very low leakage current: IRM = 100 nA I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I AEC-Q101 qualified 1.3 Applicati |
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NXP |
Low Capacitance Unidirectional ESD Protection Diodes I Unidirectional ESD protection of one line I Low diode capacitance: Cd = 34 pF I Low clamping voltage: VCL = 11 V I Very low leakage current: IRM = 100 nA I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I AEC-Q101 qualified 1.3 Applicati |
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Desde 2024. D4U Semiconductor.
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